Semiconductor Scribe Grid Seal Ring for Dicing Protection
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Solution Overview
Problem
The advancement of semiconductor wafer processing techniques leads to a reduction in the scribe grid region area, increased complexity of wiring layers and interlayer insulating films, and the use of low-k materials, which results in frequent internal separation and damage during the dicing process due to the brittle nature and poor adhesiveness of these films.
Innovation Solution
A semiconductor device with a scribe grid region featuring a seal section comprising a main band and sub bands made of metal layers, such as copper, aluminum, or tungsten, with a multilayer structure and vias between wiring layers, to enhance mechanical strength and prevent chipping and internal separation during dicing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If low-k materials are used for interlayer insulating films to reduce wiring delay, then signal transmission speed is improved, but mechanical strength and adhesiveness deteriorate causing internal separation and damage during dicing
Solution Approach 1:
The patent applies different material properties to different regions: low-k materials are used in the semiconductor element regions for low wiring delay, while high mechanical strength materials (such as spin-on-glass or benzocyclobutene) are used specifically in the scribe grid region to prevent damage during dicing. This local differentiation allows simultaneous optimization of both signal transmission speed and mechanical strength.
Solution Approach 2:
The patent segments the wafer into two functional regions: semiconductor element regions where low-k materials provide electrical performance, and scribe grid regions where mechanical strength is prioritized for dicing protection. This segmentation allows each region to have optimized properties without compromising the other.
2Productivity
If the scribe grid region area is reduced to increase semiconductor element density, then productivity is improved, but the margin for dicing is reduced making the structure more vulnerable to damage
Solution Approach 1:
The patent enhances the scribe grid region with high mechanical strength materials specifically at the dicing lines, providing localized reinforcement that protects against dicing damage even when the overall scribe grid area is minimized for higher element density.
Solution Approach 2:
The patent forms high mechanical strength films in advance in the scribe grid region before the dicing process, creating a protective structure that prevents internal separation and chipping during the subsequent dicing operation, thereby maintaining reliability despite reduced dicing margins.
3Manufacturing precision
If wiring layers and interlayer insulating films are increased in number and complexity to achieve finer process rules, then manufacturing precision is improved, but the structure becomes more vulnerable to internal separation and damage during dicing
Solution Approach 1:
The patent reinforces the scribe grid region with high mechanical strength materials to protect the complex multilayer structure formed by fine process rules. This localized reinforcement prevents internal separation in the boundary regions without affecting the manufacturing precision achieved through multiple wiring layers and interlayer insulating films.
Data Source
AI summary
A seal ring is continuously formed along a boundary between a semiconductor element region and a scribe grid region, auxiliary parts are intermittently arranged along the seal ring, and the seal ring is constituted by a metal layer.