Segmented Seal Ring Structure for Semiconductor Moisture Protection
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Solution Overview
Problem
Existing semiconductor devices face challenges in protecting integrated circuit (IC) chips from moisture and ionic contaminants entering through the side periphery, which can affect operational reliability and lead to defects during further processing.
Innovation Solution
A seal ring structure is formed around the side periphery of the IC chip, comprising a metal wall structure that extends through the silicon layer, providing enhanced structural reinforcement and protection by forming a loop or multiple loops with gaps, and is configured to be longer than the pitch of contact structures, thereby preventing moisture and ionic contaminants from entering active circuitry regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a seal ring structure is formed to protect IC chips from moisture and ionic contaminants, then reliability is improved, but device complexity increases
Solution Approach 1:
The seal ring structure is divided into multiple discrete wall structures arranged in a loop around the side periphery of the IC chip. Each wall structure is a separate element that collectively forms the protective barrier, allowing for modular fabrication and assembly while maintaining comprehensive protection.
Solution Approach 2:
The wall structures are positioned to extend through the silicon layer and are integrated with existing IC chip layers and structures. The seal ring is nested within the overall device architecture, combining protection functionality with structural reinforcement without completely separate implementation.
2Object-affected harmful factors
If the first wall structure length is made longer than contact structure pitch, then protection effectiveness is improved, but manufacturing precision requirements increase
Solution Approach 1:
The wall structures have varying lengths tailored to specific locations around the IC chip periphery. Each wall structure is sized appropriately for its local protection needs, with longer segments where contamination risk is higher and shorter segments where contact structures are densely spaced, optimizing protection while managing manufacturing complexity.
Solution Approach 2:
The dimensions of the wall structures, particularly their lengths, are carefully controlled to exceed the pitch of contact structures. This parameter relationship ensures that moisture and contaminants cannot penetrate through gaps between walls and contacts, providing effective protection while establishing clear design criteria for manufacturing.
3Strength
If multiple wall structures with gaps are used to form loops, then structural reinforcement is improved, but ease of manufacture decreases
Solution Approach 1:
The continuous seal ring is segmented into multiple discrete wall structures with gaps between them. This segmentation provides structural reinforcement by creating a looped configuration that resists deformation while allowing each individual wall to be fabricated and positioned independently, simplifying the manufacturing process.
Solution Approach 2:
Rather than forming a completely continuous wall around the entire periphery, the invention uses partial wall structures spaced at intervals. This partial action approach provides sufficient structural reinforcement and protection while significantly reducing fabrication complexity compared to a fully continuous structure.
Data Source
AI summary
Aspects of the disclosure provide a semiconductor device. In some examples, the semiconductor device includes a seal ring structure surrounding the region. The seal ring structure includes a first wall structure that extends through the silicon layer, and a first length of the first wall structure along a side periphery of the first die is longer than a pitch of contact structures.