Semiconductor Seal Ring Varying Via Pitch

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Solution Overview

Problem

Semiconductor devices face challenges with low-k interlayer dielectrics, which lack mechanical strength and moisture resistance, leading to issues during the CMP process and potential delamination, especially when porous materials are used, resulting in reduced chip performance and increased vulnerability to moisture intrusion.

Innovation Solution

The semiconductor device incorporates a seal ring region with varying via and interconnect pitches between layers, specifically narrowing these in lower layers to enhance mechanical strength, adhesion, and moisture resistance, while maintaining the seal ring size within limits by optimizing the metal content and using a barrier insulating layer for improved moisture resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If low-k materials are used to form the interlayer dielectric, then the dielectric constant is reduced and crosstalk between interconnect lines is reduced, but the film strength and adhesion properties deteriorate

Engineering Contradiction:
Improvecrosstalk reductionVSAvoidfilm strength
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The patent applies different via pitches in different via layers to address local quality requirements. Specifically, the first via layer has a first via pitch while the second via layer has a second via pitch that is different from the first, allowing optimization of mechanical strength and adhesion properties in specific regions where low-k materials are used

Inventive Principle:
Principle #3Local quality

2Ease of manufacture

If the seal ring region size is determined according to upper layer interconnects and vias, then the upper layers can be properly formed, but the seal ring region excessively expands

Engineering Contradiction:
Improveupper layer formationVSAvoidseal ring region area
Core Design Contradiction:
Ease of manufactureVSArea of stationary object

Solution Approach 1:

The patent applies local quality by implementing different via pitches in different via layers. The first via layer has a first via pitch and the second via layer has a second via pitch, allowing optimization of seal ring region dimensions to prevent excessive expansion while maintaining upper layer formation capability

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS7663240B2Semiconductor device with multiple interconnect layers and vias
Publication Date: 2010.02.16 RENESAS ELECTRONICS CORP
  • US7663240B2 patent drawing
  • US7663240B2 patent drawing
  • US7663240B2 patent drawing

AI summary

Mechanical strength and moisture resistance of a multilayer interconnect structure is to be improved. A semiconductor device includes a circuit region and a seal ring region formed around the circuit region, on a semiconductor substrate. The seal ring region includes a plurality of interconnect layers including interconnect lines and a plurality of via layers including a plurality of slit vias stacked on one another, and a pitch between the slit vias in at least one of the via layers (lower or middle layer) is different from a pitch between the slit vias in other via layers (upper layer).