Semiconductor Sealing Region with Integrated Decoupling Capacitor
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Solution Overview
Problem
Semiconductor devices face challenges in reducing size and improving design efficiency due to the need for a sealing region to prevent cracks and moisture damage during dicing, while also requiring a decoupling capacitor region for noise reduction, which occupies significant space.
Innovation Solution
Incorporating a decoupling capacitor region within the sealing region, specifically in the moisture oxidation barrier and crack stop regions, using capacitor metal wiring patterns connected to power supply lines with dielectric patterns in between, and capacitor vias to interconnect layers, allowing for reduced internal circuit area and overall device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a sealing region is formed to surround the internal circuit for preventing cracks and moisture damage during dicing, then the reliability of the semiconductor device is improved, but the chip size increases due to the additional sealing region area
Solution Approach 1:
The patent combines the sealing region and decoupling capacitor region into a single integrated structure. The decoupling capacitor region is positioned within the sealing region, allowing both functions (protection and noise filtering) to coexist in the same spatial area, thereby reducing the overall chip size while maintaining reliability
2Reliability
If a decoupling capacitor region is added to remove power supply noise, then the electrical performance is improved, but the chip size increases due to the additional component area
Solution Approach 1:
The decoupling capacitor region is merged with the sealing region, allowing the capacitor components to be positioned within the area already designated for sealing functions. This integration eliminates the need for separate dedicated capacitor areas, reducing overall chip size while maintaining noise filtering capability
Solution Approach 2:
The patent utilizes vertical stacking of metal wiring layers and dielectric patterns to create three-dimensional capacitor structures. By extending the capacitor design into the vertical dimension with multiple stacked layers, the patent achieves sufficient capacitance value without proportionally increasing the horizontal chip area
3Area of stationary object
If the decoupling capacitor region is placed outside the sealing region, then the internal circuit area is maximized, but the device efficiency decreases due to increased power supply noise
Solution Approach 1:
The sealing region and decoupling capacitor region are merged into a single functional area. The capacitor structures are positioned within the sealing region boundaries, allowing the internal circuit to expand into areas previously dedicated to external capacitor placement, while still achieving noise filtering within the protected region
Data Source
AI summary
Semiconductor devices may include an internal circuit, a sealing region surrounding the internal circuit, and a decoupling capacitor region in the sealing region. The decoupling capacitor region may include decoupling capacitors. Each of the decoupling capacitors may include a first capacitor metal wiring pattern connected to a high power supply line, a second capacitor metal wiring pattern spaced apart from the first capacitor metal wiring pattern and connected to a low power supply line, and a dielectric pattern between the first capacitor metal wiring pattern and the second capacitor metal wiring pattern.