Semiconductor Sealing Resin for Metal Diffusion Control

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Solution Overview

Problem

In semiconductor devices, increasing porosity to lower the dielectric constant allows metal components like copper to intrude into the interlayer dielectric layer, leading to increased dielectric constant and leak currents, and existing solutions like micellar surfactants and polyvinyl alcohol-based polymers either form bulky layers or reduce adherence between dielectric and interconnection materials.

Innovation Solution

A composition with a resin having two or more cationic functional groups, a weight-average molecular weight of 2,000 to 100,000, and a volume average particle diameter of less than 10 nm, which forms a thin layer on the interlayer dielectric layer to suppress metal diffusion and enhance adherence with interconnection materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If porosity is increased to lower the dielectric constant, then the dielectric constant is reduced, but metal components intrude into pores causing increased dielectric constant and leak currents

Engineering Contradiction:

ImproveporosityVSAvoidmetal intrusion prevention

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

A sealing resin layer is introduced as an intermediary substance between the porous interlayer dielectric layer and the copper interconnection. This resin layer fills and seals the pores on the surface of the dielectric layer, preventing metal components from intruding into the pores while maintaining the low dielectric constant benefit of the porous structure.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

A thin resin film is formed on the surface of the porous interlayer dielectric layer to seal the pores. This thin film structure effectively blocks metal intrusion while minimizing the increase in dielectric constant that would result from adding a thick non-porous layer.

Inventive Principle:

Principle #30Flexible shells and thin films

2Reliability

If micellar surfactant is used to seal pores, then pore sealing is achieved, but adherence between interlayer dielectric layer and interconnection material decreases

Engineering Contradiction:

Improvepore sealingVSAvoidadherence

Core Design Contradiction:

ReliabilityVSStrength

Solution Approach 1:

The invention changes the key parameter from using micellar surfactants to using a sealing resin with specific molecular weight (2,000 to 100,000) and particle diameter (not more than 10 nm). These parameter changes enable the resin to form a thin sealing layer that maintains both pore sealing effectiveness and good adherence to interconnection materials.

Inventive Principle:

Principle #35Parameter changes

3Ease of operation

If polyvinyl alcohol-based amphiphilic polymer is applied to control hydrophilicity, then surface hydrophilicity is controlled, but a bulky layer is formed increasing dielectric constant

Engineering Contradiction:

Improvehydrophilicity controlVSAvoidlayer thickness

Core Design Contradiction:

Ease of operationVSQuantity of substance

Solution Approach 1:

The invention uses a thin resin film with controlled thickness (formed from resin with particle diameter not more than 10 nm) to seal the pores. This thin film approach controls the hydrophilicity of the surface while avoiding the formation of a bulky layer that would increase the dielectric constant.

Inventive Principle:

Principle #30Flexible shells and thin films

4Reliability

If resin layer is formed to prevent metal diffusion, then metal intrusion is suppressed, but layer thickness increases causing dielectric constant increase

Engineering Contradiction:

Improvemetal diffusion suppressionVSAvoidresin layer thickness

Core Design Contradiction:

ReliabilityVSQuantity of substance

Solution Approach 1:

The invention changes the parameters of the resin material, specifically using resin with a weight-average molecular weight of 2,000 to 100,000 and a volume average particle diameter of not more than 10 nm. These parameter changes enable the formation of an ultra-thin sealing layer that effectively suppresses metal diffusion while minimizing the increase in dielectric constant.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively forms a thin resin layer that prevents metal diffusion into the interlayer dielectric layer, maintaining low dielectric constant and ensuring superior adherence with interconnection materials, thereby improving semiconductor device performance.

Implementation Method 1

a resin having two or more cationic functional groups and a weight-average molecular weight of from 2,000 to 100,000... forms a thin layer on the interlayer dielectric layer to suppress metal diffusion

Methodology Applied

Scientific EffectAdsorption: Adsorption

Data Source

PatentUS8304924B2Composition for sealing semiconductor, semiconductor device, and process for producing semiconductor device

Publication Date: 2012.11.06 MITSUI CHEMICALS INC

AI summary

The invention provides a composition for sealing a semiconductor, the composition being able to form a thin resin layer, suppress the diffusion of a metal component to a porous interlayer dielectric layer, and exhibit superior adherence with respect to an interconnection material. The composition for sealing a semiconductor contains a resin having two or more cationic functional groups and a weight-average molecular weight of from 2,000 to 100,000; contains sodium and potassium each in an amount based on element content of not more than 10 ppb by weight; and has a volume average particle diameter, measured by a dynamic light scattering method, of not more than 10 nm.