Semiconductor Device Sealing Slit Thermal Management

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In semiconductor devices, high temperatures caused by heat generation can lead to decreased operation speeds and potential failures in semiconductor elements due to thermal conduction from a high-power semiconductor element to other elements via the sealing material, resulting in increased temperatures and reduced mechanical strength.

Innovation Solution

The implementation of slits in the sealing material between semiconductor elements, which reduces thermal conduction by hindering heat transfer while maintaining mechanical integrity, and the use of materials with lower thermal conductivity embedded in the slits to enhance mechanical strength.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If heat dissipation is improved by removing sealing material, then temperature increases are alleviated, but mechanical strength and protection are reduced

Engineering Contradiction:
Improvetemperature of semiconductor elementVSAvoidmechanical strength of sealing structure
Core Design Contradiction:
TemperatureVSStrength

Solution Approach 1:

The sealing material is segmented by forming slits that divide it into multiple regions. These slits create thermal barriers that interrupt heat conduction paths between semiconductor elements while the sealing material remains continuous across the substrate, maintaining mechanical integrity and protective function.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The sealing material is configured with different properties in different regions: areas with slits provide thermal insulation to reduce heat transfer between adjacent semiconductor elements, while continuous areas maintain mechanical strength and sealing functionality. This local differentiation allows simultaneous optimization of thermal and mechanical properties.

Inventive Principle:
Principle #3Local quality

2Reliability

If thermal conduction is reduced to protect semiconductor elements, then temperature increases are prevented, but heat dissipation capability is compromised

Engineering Contradiction:
Improveoperational stability of semiconductor elementVSAvoidheat dissipation efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

Slits are formed in the sealing material to segment and interrupt thermal conduction paths between semiconductor elements, reducing thermal coupling and protecting temperature-sensitive elements while allowing each element to maintain its own thermal management.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The sealing material acts as an intermediary with controlled thermal properties - the slits create thermal resistance that protects semiconductor elements from excessive heat transfer, while the overall structure still permits adequate heat dissipation to the substrate and environment.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively alleviates temperature increases in semiconductor elements, maintains operational stability, and prevents mechanical strength reduction by minimizing thermal conduction while allowing efficient heat dissipation through strategic slit design and material selection.

Implementation Method 1

thermal conduction from a high-power semiconductor element to other elements via the sealing material

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11568901B2Semiconductor device
Publication Date: 2023.01.31 KIOXIA CORP
  • US11568901B2 patent drawing
  • US11568901B2 patent drawing
  • US11568901B2 patent drawing

AI summary

A semiconductor device of an embodiment includes: a wiring board having a first surface and a second surface on a side opposite to the first surface; a first semiconductor element on the first surface of the wiring board; a second semiconductor element on the first surface of the wiring board; and a first sealing material that seals at least the second semiconductor element. A slit is formed in the first sealing material between the first semiconductor element and the second semiconductor element. When a thickness of the first sealing material on the first semiconductor element is t1 and a thickness of the first sealing material on the second semiconductor element is t2, the t1 and the t2 satisfy a relationship of 0≤t1<t2.