Semiconductor Device Security via Gate Insulating Film Carrier Emission

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Solution Overview

Problem

Conventional security systems for non-volatile memory and logic circuit systems may be inadequate in ensuring reliability and uniqueness, particularly due to variations in physical characteristics of semiconductor devices, which can be influenced by manufacturing processes and environmental factors.

Innovation Solution

An information processing system that includes a time constant processor and a pattern generator, which binarizes values from unit circuits based on the time to emission and capture of carriers in the gate insulating film, generating a unique pattern for each semiconductor device, enhancing security by leveraging the inherent variability of semiconductor devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional security systems are used for non-volatile memory systems, then the system can operate with standard security measures, but the security and reliability are inadequate due to variations in physical characteristics of semiconductor devices

Engineering Contradiction:
Improvesecurity reliabilityVSAvoidphysical characteristic variations
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent converts the harmful effect of physical characteristic variations (which cause reliability issues in conventional security systems) into a beneficial unique identifier for each device. By measuring and binarizing the variations in gate insulating film properties, the system creates a distinctive fingerprint that enhances security while accounting for manufacturing variations.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent changes the approach from trying to eliminate physical variations to utilizing them as security parameters. By measuring specific electrical parameters (channel current, gate voltage relationships) and binarizing them based on time constants, the system transforms manufacturing variations into reliable security identifiers that are unique to each device.

Inventive Principle:
Principle #35Parameter changes

2Area of moving object

If the area of semiconductor device is reduced to achieve higher integration, then the device becomes lighter and more integrated, but the influence of single defect increases making reliability harder to ensure

Engineering Contradiction:
Improvedevice areaVSAvoiddefect resistance
Core Design Contradiction:
Area of moving objectVSReliability

Solution Approach 1:

The patent converts the increased sensitivity to defects (caused by smaller device area) into a security advantage. The unique defect patterns and physical variations in small-area devices are measured and binarized to create distinctive identifiers, turning what would be reliability problems into security features.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

Each device's unique physical characteristics and defect patterns serve as its own security identifier. The device inherently possesses unique properties due to manufacturing variations and defects, and the system automatically measures and utilizes these properties without requiring external security components or additional complexity.

Inventive Principle:
Principle #25Self-service

3Reliability

If variations in semiconductor devices are used for authentication, then security can be improved through unique device identifiers, but conventional security systems may be inadequate due to environmental factors and device deterioration

Engineering Contradiction:
Improveauthentication reliabilityVSAvoidenvironmental independence
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent measures the relationship between gate voltage and channel current at different time points to extract time constants that are characteristic of each device's gate insulating film. These electrical parameters are chosen because they reflect intrinsic device properties that are stable against environmental changes and deterioration, providing reliable authentication.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The system applies gate voltages, measures channel current responses, and uses the measured data to binarize device characteristics. This feedback loop allows the system to accurately capture the unique physical properties of each device while compensating for environmental variations through controlled measurement conditions and statistical analysis.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances security by creating a unique pattern for each semiconductor device, independent of environmental conditions and device deterioration, thereby improving the reliability and uniqueness of the security system.

Implementation Method 1

a time to emission indicating a time from when a defect in the gate insulating film captures a carrier in a channel current caused to flow by application of a gate voltage to the unit circuits to when the defect emits the carrier

Methodology Applied
Scientific EffectCarrier capture and emission in gate insulating film: Absorption (physical)

Data Source

PatentUS9794073B2Information processing system and semiconductor device
Publication Date: 2017.10.17 KK TOSHIBA
  • US9794073B2 patent drawing
  • US9794073B2 patent drawing
  • US9794073B2 patent drawing

AI summary

According to an embodiment, an information processing system includes a time constant processor and a pattern generator. The time constant processor binarizes values indicating a plurality of unit circuits each including a gate insulating film on the basis of a time to emission indicating a time from when a defect in the gate insulating film captures a carrier in a channel current caused to flow by application of a gate voltage to the unit circuits to when the defect emits the carrier. The pattern generator generates a pattern unique to the unit circuits using the values indicating the respective unit circuits binarized by the time constant processor.