Semiconductor Seed Layer Grain Growth via Time-Divided Gas Deposition
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Solution Overview
Problem
High integration and high performance semiconductor devices require thinner metal-containing films, but these films tend to increase in resistivity due to reduced grain size and surface oxidation, which is undesirable.
Innovation Solution
A technique involving the formation of a seed layer with lower nuclear density using organic and inorganic metal-containing gases in a time-division manner, followed by the deposition of a metal-containing nitride film, to increase grain size and reduce resistivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the metal-containing film is thinned to achieve high integration, then the film thickness is reduced, but the resistivity increases due to reduced grain size and surface oxidation
Solution Approach 1:
A seed layer is formed on the substrate before forming the metal-containing film. This preliminary action provides a foundation with larger grain size that suppresses resistivity increase in the subsequent thin metal-containing film, addressing the contradiction between thin film requirement and resistivity control
Solution Approach 2:
The formation process uses time-division manner with alternating organic and inorganic metal-containing gases to control the seed layer properties. By changing the gas type and deposition parameters, the seed layer achieves optimal grain structure that maintains low resistivity in the final thin film
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses the increase in resistivity of metal-containing films by forming a seed layer with a lower nuclear density, resulting in improved film properties and performance.
Implementation Method 1
forming a seed layer containing a metal element on a substrate by performing a first process and a second process in a time-division manner a predetermined number of times, the first process supplying and exhausting organic metal-containing gas containing the metal element to the substrate, the second process supplying and exhausting inorganic metal-containing gas containing the metal element to the substrate
Implementation Method 2
forming a metal-containing nitride film on the substrate on which the seed layer is formed using the seed layer as a seed by performing a third process and a fourth process in a time-division manner a predetermined number of times, the third process supplying and exhausting the inorganic metal-containing gas to the substrate, the fourth process supplying and exhausting nitrogen-containing gas to the substrate
Implementation Method 3
forming a metal-containing nitride film on the substrate on which the seed layer is formed using the seed layer as a seed by performing a third process and a fourth process in a time-division manner a predetermined number of times, the third process supplying and exhausting the inorganic metal-containing gas to the substrate, the fourth process supplying and exhausting nitrogen-containing gas to the substrate
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a seed layer containing a metal element on a substrate by performing a first process and a second process in a time-division manner. The first process supplying and exhausting organic metal-containing gas containing the metal element to the substrate. The second process supplying and exhausting inorganic metal-containing gas containing the metal element to the substrate, and forming a metal-containing nitride film on the substrate on which the seed layer is formed using the seed layer as a seed by performing a third process and a fourth process in a time-division manner. The third process supplying and exhausting the inorganic metal-containing gas to the substrate. The fourth process supplying and exhausting nitrogen-containing gas to the substrate.