Semiconductor Device Segmentation for Product-Sum Error Reduction

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Solution Overview

Problem

The semiconductor device described in Patent Document 1 experiences increased errors due to high driving currents for data lines, which affects the accuracy of product-sum operations.

Innovation Solution

A semiconductor device configuration that divides input values into multiple bit values, uses memory units with ternary values to perform product-sum operations, and includes a sum operation circuit to reduce the driving current for data lines, thereby suppressing errors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a large number of memory cells are connected to drive data lines for high-speed product-sum operations, then operation speed is improved, but driving current increases causing error rates to increase

Engineering Contradiction:
Improveoperation speedVSAvoiderror rate
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent divides the cell array into multiple banks (first bank, second bank, third bank, fourth bank) and further segments memory cells into groups within each bank. This segmentation allows parallel operation across multiple banks while limiting the number of cells driving each individual data line, thereby maintaining high operation speed through parallelism while reducing error rates by controlling current per data line.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a bank dimension orthogonal to the traditional row-column memory cell organization. By adding this fourth dimension (bank level), the system achieves parallel processing across banks while maintaining manageable data line loading within each bank, effectively resolving the contradiction between speed and reliability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If memory cells use ternary values for product-sum operations, then computational efficiency is improved, but operation accuracy decreases due to high driving current

Engineering Contradiction:
Improvecomputational efficiencyVSAvoidoperation accuracy
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

By segmenting memory cells into groups across multiple banks, the patent enables ternary value product-sum operations to proceed in parallel while limiting the current burden on each data line. This maintains computational efficiency through parallel ternary operations while improving accuracy by reducing current-induced errors in each operational unit.

Inventive Principle:
Principle #1Segmentation

3Productivity

If more memory cells are activated for parallel processing, then productivity is improved, but power consumption increases due to higher driving current requirements

Engineering Contradiction:
Improveparallel processing capabilityVSAvoidpower consumption
Core Design Contradiction:
ProductivityVSUse of energy by moving object

Solution Approach 1:

The patent organizes memory cells into multiple banks that can operate in parallel, achieving high productivity through parallel processing. However, by limiting the number of cells per bank and controlling which cells are activated simultaneously within each bank, the system manages power consumption more effectively, preventing excessive current draw while maintaining parallel processing benefits.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20240143281A1Semiconductor device
Publication Date: 2024.05.02 RENESAS ELECTRONICS CORP
  • US20240143281A1 patent drawing
  • US20240143281A1 patent drawing
  • US20240143281A1 patent drawing

AI summary

A related-art semiconductor device has a problem that is a large operation error. A semiconductor device according to an embodiment includes: an input control circuit dividing a plurality of bit values representing an input value into a plurality of division values each having a predetermined number of bits, and outputting the division values; a plurality of memory units each including a plurality of memory cells each outputting a product of a held value represented by a ternary value and any one of the plurality of bit values representing the input value, each of the plurality of memory units corresponding to any one of the division values; and a sum operation circuit performing sum operation processing to an output value to be output for each of the division values, and outputting a final operation result value.