Semiconductor Structure Using Segmentation Layers for Pattern Precision
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to achieve precise and complex pattern formation on increasingly smaller scales, which is hindered by the difficulty in matching the pattern on a wafer with the target pattern, leading to poor pattern precision and quality, especially in back-end-of-line metal interconnect lines.
Innovation Solution
A semiconductor structure and forming method involving a mandrel layer, mask spacer, segmentation layers, and sacrificial layers are used to create segmented grooves, allowing for precise control of pitch and pattern formation, reducing the complexity of the etching process and enhancing pattern precision and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional patterning methods are used, then the manufacturing process is simple, but the pattern precision and quality deteriorate at small scales
Solution Approach 1:
The patent introduces segmentation layers (first segmentation layer and second segmentation layer) that divide the continuous sacrificial layer into discrete segments. This segmentation enables independent control of pitch and pattern formation in different regions, allowing precise pattern matching while maintaining process feasibility through modular layer structures
Solution Approach 2:
The patent forms the segmentation layers and sacrificial layers before the final patterning step. The segmentation layers are prepared in advance to define the pitch, and the sacrificial layers are positioned beforehand to enable subsequent pattern transfer. This preliminary preparation ensures that when the target layer is patterned, the precise geometry is already established by the pre-formed mask structure
2Manufacturing precision
If the pitch between adjacent patterns is reduced, then the functional density increases, but the pattern quality and matching degree deteriorate
Solution Approach 1:
The segmentation layers divide the mask structure into discrete pitch-defining units. The first segmentation layer controls the pitch between adjacent grooves, while the second segmentation layer controls the pitch between adjacent target patterns. This hierarchical segmentation enables independent optimization of pitch dimensions without compromising pattern matching degree
Solution Approach 2:
The sacrificial layers act as intermediaries between the segmentation layers and the target layer. They are positioned between the segmentation layers and the target layer to transfer the pitch definition from the segmentation layers to the final pattern. This intermediary structure enables precise pitch control while maintaining pattern quality during the pattern transfer process
3Quantity of substance
If the geometric size of components is decreased, then the functional density increases, but the difficulty and complexity of manufacturing increases
Solution Approach 1:
The patent segments the mask structure into modular layers (segmentation layers, sacrificial layers, mandrel layers) that can be independently formed and controlled. This modularity allows each layer to be optimized for its specific function, reducing the overall manufacturing difficulty despite smaller component sizes. The segmented approach enables step-by-step process control rather than requiring complex single-step patterning
Solution Approach 2:
The patent transitions from two-dimensional planar patterning to three-dimensional multi-layer mask structures. By adding vertical dimensionality with multiple stacked layers (segmentation layers at different heights, sacrificial layers, mandrel layers), the patent achieves precise control of small-geometry patterns through vertical stacking rather than relying solely on horizontal resolution, thereby reducing manufacturing difficulty at small scales
Data Source
AI summary
A semiconductor structure and a forming method thereof are provided. In one form, a forming method includes: providing a base; forming a mandrel layer extending along a first direction; forming a mask spacer on a side wall of the mandrel layer; forming a first segmentation layer extending along a second direction, where the first segmentation layer is in contact with a side wall of the mask spacer along the first direction; forming a sacrificial layer arranged spaced from the mandrel layer along the second direction, where the sacrificial layer covers the side wall of the mask spacer along the first direction, and along the first direction, the sacrificial layer protrudes from two sides of the first segmentation layer and covers a part of a side wall of the first segmentation layer; forming a planarization layer on the base exposed from the sacrificial layer, the mandrel layer, the mask spacer, and the first segmentation layer; removing the sacrificial layer to form a first groove, where the first groove is segmented by the first segmentation layer along the first direction; removing the mandrel layer to form a second groove; and patterning a target layer below the first groove and the second groove by using the mask spacer, the first segmentation layer, and the planarization layer as a mask to form a target pattern. Embodiments and implementations of the present disclosure help to improve pattern precision and pattern quality of a target pattern.