Semiconductor Device With Segmented Compound Member For Threshold Voltage Control
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Solution Overview
Problem
Current semiconductor devices face challenges in improving characteristics such as ON-resistance and threshold voltage, particularly when using compound members like SiAlO or SiAlON films, which can adversely affect carrier regions and lead to high ON-resistance and unstable threshold voltage.
Innovation Solution
The semiconductor device incorporates a compound member with specific composition ratios of Al, Si, and oxygen, strategically positioned between insulating and semiconductor regions, avoiding overlap with carrier regions to control electric field distribution and maintain low ON-resistance while achieving high threshold voltage, employing a recess gate structure and nitride semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If compound members (SiAlO or SiAlON films) are used to control electric field distribution, then threshold voltage can be increased, but ON-resistance increases and becomes unstable
Solution Approach 1:
The patent applies local quality by creating distinct regions with different compound member compositions. The first compound member region has a different Al/Si ratio than the second compound member region, allowing each region to perform its specific function: the first region controls threshold voltage while the second region maintains low ON-resistance by avoiding excessive carrier depletion.
Solution Approach 2:
The compound member is segmented into multiple regions with different compositions and positions. Rather than using a single uniform compound member layer, the patent divides it into at least two regions with different Al/Si ratios, where each segment addresses a specific electrical characteristic requirement.
2Reliability
If compound members are positioned to control electric field, then threshold voltage increases, but carrier regions are adversely affected leading to high ON-resistance
Solution Approach 1:
Different regions of the compound member have different compositions tailored to their local functions. The first compound member region is positioned and composed to control threshold voltage, while the second compound member region is specifically designed to minimize adverse effects on carrier regions, thus protecting carrier density while achieving voltage control.
Solution Approach 2:
The compound member acts as an intermediary element between the gate electrode and the semiconductor regions. By positioning the compound member regions strategically and using different compositions, it mediates the electric field distribution to achieve threshold voltage control while minimizing direct adverse interaction with carrier regions.
3Ease of manufacture
If uniform compound member composition is used, then manufacturing is simplified, but electrical characteristics (ON-resistance and threshold voltage) cannot be optimized simultaneously
Solution Approach 1:
The patent implements local quality by specifying different Al/Si composition ratios for different regions of the compound member. This allows optimization of electrical characteristics in each region while maintaining a relatively simple overall structure that can be fabricated using standard semiconductor manufacturing processes.
Solution Approach 2:
The patent changes the compositional parameters of the compound member across different regions. By varying the Al/Si ratio and positioning of compound member regions, it optimizes the electrical characteristics (threshold voltage and ON-resistance) while the variations can be achieved through controlled deposition or diffusion processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for stable low ON-resistance and high threshold voltage, enhancing the overall characteristics of the semiconductor device by controlling the influence of the compound member on carrier regions.
Implementation Method 1
strategically positioned between insulating and semiconductor regions, avoiding overlap with carrier regions to control electric field distribution
Implementation Method 2
The first semiconductor region includes Alx1Ga1-x1N (0≤x1<0.5) and the second semiconductor region includes Alx2Ga1-x2N (0≤x2<0.5), forming a heterostructure
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first insulating member, and a compound member. The third electrode includes a first electrode portion. The first electrode portion is between the first and second electrodes. The semiconductor member includes a first semiconductor region and a second semiconductor region. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes a first insulating region. The first insulating region is between the third partial region and the first electrode portion. The compound member includes a first compound region. At least a part of the first semiconductor portion dose not overlap the compound member in the second direction.