Semiconductor Device with Segmented Conductive Layer for Power Electronics
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Solution Overview
Problem
Existing semiconductor devices for power electronics lack a higher safety level and longer service life when used with power semiconductors, particularly during switching operations with inductive loads, where unwanted oscillations and voltage peaks can cause damage.
Innovation Solution
A semiconductor device with a semiconductor layer, insulating layer, and electrically conductive layers featuring depressions and recesses that create regions with narrowed cross-sections, allowing for controlled current flow and automatic disconnection when exceeding a threshold current, preventing damage to the device and other components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional integrated RC snubber devices are used, then the device structure is simple and manufacturing is easy, but the safety level is insufficient and service life is limited when current exceeds safe limits
Solution Approach 1:
The first electrically conductive layer is segmented into multiple subregions by recesses, creating narrow sections that act as independent current limiting elements. Each subregion can be isolated if its narrow section fails, preventing complete device failure and enhancing safety without significantly complicating the overall structure
Solution Approach 2:
Narrow sections are pre-formed in the first electrically conductive layer during manufacturing, creating predetermined weak points that will fail first under excessive current conditions. This preliminary structuring ensures that safety mechanisms are already in place before operation, allowing the device to protect itself automatically when current exceeds safe limits
2Duration of action of stationary object
If conventional integrated RC snubber devices are used, then the manufacturing process is straightforward, but the service life is reduced due to lack of automatic disconnection capability
Solution Approach 1:
The conductive layer is divided into subregions with narrow sections that can fail independently. This segmentation extends service life by allowing partial functionality to remain after localized failure, and the additional recess structures can be integrated into existing manufacturing workflows
Solution Approach 2:
The device automatically disconnects defective elements through the narrow section failure mechanism without requiring external intervention. The structure self-regulates current flow and isolates failed regions, eliminating the need for complex protection circuits while extending operational life
3Reliability
If narrow sections are formed in the electrically conductive layer, then automatic disconnection and isolation of defective elements is enabled, but the manufacturing precision requirements increase
Solution Approach 1:
Narrow sections are formed as predetermined features during the manufacturing process using standard deposition and etching techniques. By pre-defining the geometry and location of narrow sections, the design converts a potential precision challenge into a controlled manufacturing parameter that can be standardized
Solution Approach 2:
The narrow sections create localized regions with specific geometric properties (reduced cross-section) only where needed for current limiting. The rest of the device maintains conventional structures, allowing high precision to be applied only to critical narrow sections while keeping overall manufacturing complexity manageable
4Reliability
If multiple recesses and subregions are created in the first electrically conductive layer, then current flow control and safety isolation are improved, but the device complexity increases
Solution Approach 1:
The first electrically conductive layer is divided into multiple subregions separated by recesses, creating narrow sections that provide current limiting and isolation functionality. This segmentation enhances safety by allowing individual subregion isolation while maintaining a relatively simple overall layer structure that follows conventional multi-layer device architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device ensures safe operation by isolating defective elements and preventing damage to other components in power modules, maintaining functionality even when current exceeds safe limits, thus enhancing safety and service life.
Implementation Method 1
The insulating layer is deposited on the first side of the semiconductor layer and extends into the pits
Implementation Method 2
The first electrically conductive layer is deposited on the insulating layer and extends into, but not filling, the pits
Implementation Method 3
The narrow sections act as electrical connection conductive paths in the first electrically conductive layer
Implementation Method 4
narrow sections acting as electrical connection conductive paths in an electrically conductive layer of the multi-layer semiconductor device melt at electrical currents higher than a predefined threshold value
Data Source
AI summary
The present invention suggests a semiconductor device for integration into a power module. The semiconductor device comprises (a) a semiconductor layer (10), a first side of the semiconductor layer (10) having a plurality of depressions (11); (b) an insulating layer (12; 12a, 12b), the insulating layer being deposited on the first side of the semiconductor layer (10) and engaging in the depressions (11); (c) a first electrically conductive layer (14; 14a, 14b) for contacting the semiconductor device (1, 2), the first electrically conductive layer (14; 14a, 14b) being deposited on the insulating layer (12a, 12b); and (d) a second electrically conductive layer (16) for contacting the semiconductor device (1, 2), the second electrically conductive layer (16) being deposited on a second side of the semiconductor layer (10) opposite to the first side. The first electrically conductive layer (14; 14a, 14b) has a plurality of recesses (20, 20) and a plurality of subregions (24), and each subregion (24) is enclosed by at least one recess (20), leaving at least one region (22, 22) having a narrowed cross-section.