Semiconductor Device With Segmented Gate Structure
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Solution Overview
Problem
As semiconductor devices become more highly integrated, they face challenges in minimizing the short channel effect and preventing gate-induced drain leakage (GIDL), particularly due to the miniaturization of circuit patterns and the proximity of source/drain regions to gate electrodes, which leads to increased leakage currents.
Innovation Solution
The semiconductor device incorporates a main gate electrode and a pass gate electrode structure with a support structure and capping pattern, where the pass gate electrode is positioned lower than the main gate electrode, and the support structure extends above the pass gate electrode, reducing the overlapping area and alleviating GIDL. The device also features a second barrier conductive layer between the gate insulating layer and the pass gate electrode, and a capping pattern with a different height and width compared to the support structure, to enhance reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If circuit patterns are miniaturized to increase integration density, then the number of semiconductor devices per area increases, but the short channel effect increases and gate-induced drain leakage worsens
Solution Approach 1:
The gate structure is segmented into a main gate electrode and a pass gate electrode positioned at different heights. The pass gate electrode is located closer to the source/drain regions and operates at a lower potential, effectively segmenting the gate control function to reduce leakage currents while maintaining high integration density
Solution Approach 2:
A dielectric layer is introduced as an intermediary between the main gate electrode and the source/drain regions. This dielectric layer acts as a mediator to reduce the direct electric field interaction, thereby minimizing gate-induced drain leakage while preserving the benefits of miniaturized circuit patterns
2Area of stationary object
If source/drain regions are positioned closer to gate electrodes to reduce device area, then device footprint decreases, but gate-induced drain leakage increases
Solution Approach 1:
The pass gate electrode is strategically positioned in the local region between the source/drain regions and the main gate electrode. This local structural modification creates a potential barrier precisely where leakage occurs, reducing GIDL without increasing the overall device footprint
Solution Approach 2:
The gate structure employs asymmetric positioning with the pass gate electrode located closer to the source/drain regions than the main gate electrode. This asymmetric configuration optimizes the electric field distribution to suppress leakage currents while maintaining compact device dimensions
Data Source
AI summary
A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.