Semiconductor Component with Segmented Metal Layers
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Solution Overview
Problem
Existing methods for producing semiconductor components with high mechanical stability are complex and costly, and there is a need for a simplified and cost-effective approach that ensures robustness during processing and operation.
Innovation Solution
A semiconductor component with a p-n transition active layer, where metal layers are used to provide mechanical stability by covering the active layer and recesses, and an epitaxial growth process is employed to create a substrate-free structure with plated-through holes for electrical contacting, along with a galvanically deposited metal layer configuration to enhance mechanical support and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If complex production methods are used to achieve high mechanical stability, then mechanical stability is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The semiconductor component is divided into distinct functional layers (semiconductor body, metal layers, encapsulating resin) with specific roles. The metal layers are segmented into first and second metal layers with different functions (electrical contact vs. mechanical support), allowing each segment to be optimized independently for its specific purpose while simplifying the overall production approach.
Solution Approach 2:
The second metal layer serves multiple functions simultaneously: it provides mechanical support to prevent substrate warping, acts as an encapsulating structure, and contributes to the overall structural integrity of the component. This multi-functionality reduces the need for additional separate structural components, simplifying the production process.
2Reliability
If substrate-free structure is used to improve component robustness, then mechanical stability is improved, but production complexity increases
Solution Approach 1:
Metal layers are deposited on the semiconductor body before the substrate is completely removed. This preliminary action provides mechanical support during the substrate removal process and subsequent handling, preventing warping and damage. The metal layers are prepared in advance to serve as a stable foundation before the final substrate-free structure is achieved.
Solution Approach 2:
The semiconductor body is thinned to a controlled thickness range (5-50 μm) to achieve the desired balance between robustness and flexibility. This parameter control allows the thin substrate-free structure to maintain sufficient mechanical strength while enabling the intended optical and electrical functions.
3Strength
If metal layers cover the active layer completely to provide mechanical support, then mechanical stability is improved, but electrical contact complexity increases
Solution Approach 1:
The first metal layer is selectively positioned only in regions where electrical contact is required (contact regions), while the second metal layer provides continuous coverage for mechanical support. This local differentiation allows the electrical contact structure to be simplified by concentrating conductive material only where needed, rather than requiring complete coverage throughout the entire component.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high mechanical stability, reduces mechanical weak points, and improves robustness during processing and operation, while maintaining efficiency in electromagnetic radiation handling and electrical signal conversion.
Implementation Method 1
the active layer emits, for example, electromagnetic radiation, for instance in the visible, ultraviolet or infrared spectral range
Implementation Method 2
the active layer, during the operation of the component, can absorb electromagnetic radiation and convert the latter into electrical signals or electrical energy
Implementation Method 3
The layers of the semiconductor body can be applied in a laminar arrangement to a growth substrate by means of an epitaxy process
Implementation Method 4
By way of example, the first metal layer is a galvanically deposited metal layer
Data Source
AI summary
A component with a semiconductor body, a first metal layer and a second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer. The semiconductor body has a first semiconductor layer, a second semiconductor layer, and an active layer. The component has a plated-through hole, which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer. The second metal layer has a first subregion, and a second subregion, spaced apart laterally from the first subregion by an intermediate space. The first subregion is electrically connected to the plated-through hole and is assigned to a first electrical polarity of the component. In plan view, the first metal layer laterally completely bridges the intermediate space and is assigned to a second electrical polarity of the component which differs from the first electrical polarity.