Semiconductor Structure with Segmented P-Well Implantation
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Solution Overview
Problem
Conventional semiconductor structures face challenges in achieving high resistance and high breakdown voltage, with existing designs either having small resistance or unsuitable for high voltage operations due to soft breakdown characteristics.
Innovation Solution
A semiconductor structure is designed with a substrate of a first conductive type, a deep well of a second conductive type, two first wells and a second well with varying implant dosages, and doping regions, allowing for a higher breakdown voltage and resistance by optimizing the implant dosage ratios and doping configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the implant dosage of the P-body is reduced to increase resistance, then the resistance increases, but the breakdown voltage decreases and soft breakdown characteristics occur
Solution Approach 1:
The patent divides the single P-body region into multiple P-well regions (first P-well, second P-well, third P-well) with different implant dosages. The first and third P-wells have higher implant dosages to provide hard breakdown characteristics, while the second P-well has a lower implant dosage to provide high resistance. This segmentation allows simultaneous achievement of high resistance and high breakdown voltage with hard breakdown characteristics.
Solution Approach 2:
Different regions of the P-well structure are assigned different implant dosages to achieve different local properties. The first and third P-wells use higher implant dosages for hard breakdown, while the second P-well uses lower implant dosage for high resistance. This local quality differentiation resolves the contradiction between resistance and breakdown voltage requirements.
2Adaptability or versatility
If the operating voltage is increased to widen application range, then the application range increases, but current leakage occurs and hard breakdown characteristics are lost
Solution Approach 1:
By segmenting the P-body into multiple P-wells with different implant dosages, the structure can withstand higher operating voltages without current leakage. The higher implant dosage regions provide hard breakdown characteristics that prevent soft breakdown and current leakage, enabling operation at higher voltages for wider application range.
Solution Approach 2:
The patent creates a composite doping structure combining regions of different implant dosages within the P-well. This composite structure provides both high resistance (from lower dosage regions) and hard breakdown characteristics (from higher dosage regions), enabling high voltage operation without current leakage.
3Quantity of substance
If the resistor size is reduced to achieve higher resistance density, then the resistance per area increases, but the breakdown voltage decreases
Solution Approach 1:
The patent applies local quality by creating regions with different implant dosages within a compact structure. The higher implant dosage regions provide hard breakdown characteristics that maintain high breakdown voltage, while the lower implant dosage regions provide high resistance. This allows high resistance density without sacrificing breakdown voltage.
Solution Approach 2:
The composite doping structure with varying implant dosages enables compact high-resistance design while maintaining high breakdown voltage through the higher dosage regions that provide hard breakdown characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure achieves hard breakdown characteristics with increased resistance and higher operational voltage, making it suitable for high voltage applications without current leakage, surpassing the limitations of previous designs.
Implementation Method 1
forming a deep well extending down from a surface of the substrate, and the deep well having a second conductive type; forming two first wells and a second well within the deep well, the second well positioned between the two first wells, an implant dosage of the second well lighter than an implant dosage of each of the two first wells
Data Source
AI summary
A semiconductor structure with high breakdown voltage and high resistance and method for manufacturing the same. The semiconductor structure at least comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate; two first wells having the first conductive type and formed within the deep well; a second well having the first conductive type and formed between the two first wells within the deep well, and an implant dosage of the second well lighter than an implant dosage of each of the two first wells; and two first doping regions having the first conductive type and respectively formed within the two first wells.