Segmented Spacer and Gate Structure for Semiconductor Short Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in reducing the likelihood of electrical shorting, which can compromise their performance due to system complexity, footprint, and cost, especially when multiple discrete devices are optimized for different functions.
Innovation Solution
The semiconductor device incorporates a spacer with a first section of a first material and a second section of a second material, where the second section is disposed above a certain elevation and the first section below, providing an etch stop to prevent degradation during dielectric material removal and reducing the likelihood of electrical shorting. This design includes a conductive gate structure with varying lengths below and above the elevation, utilizing materials like silicon nitride and hafnium oxide to enhance etch stop selectivity and reduce parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single-material spacer is used, then the manufacturing process is simpler, but the spacer degrades during dielectric material removal causing electrical shorting
Solution Approach 1:
The spacer is divided into two distinct sections: a first section made of a first material and a second section made of a second material. This segmentation allows each section to serve different functions - the first section provides structural support while the second section acts as an etch stop during dielectric material removal, preventing spacer degradation and electrical shorting.
Solution Approach 2:
The spacer utilizes composite construction with two different materials having different etch selectivities. The first material and second material are combined in a single spacer structure, where the second material is more resistant to the etching process used to remove dielectric material, thereby protecting the spacer from degradation.
2Manufacturing precision
If the conductive gate structure has uniform length, then the manufacturing process is simpler, but alignment precision of conductive contacts is compromised
Solution Approach 1:
The conductive gate structure is segmented into two distinct length portions: a first length at elevations below a certain elevation and a second length at elevations above the certain elevation. This segmentation provides a stepped configuration that serves as a precise alignment reference for depositing conductive contacts, enabling better control over contact placement accuracy.
Solution Approach 2:
The gate structure utilizes vertical dimensionality with different lengths at different elevations. By creating a stepped profile in the vertical dimension, the invention provides multiple alignment references at different heights, improving the precision of conductive contact alignment without increasing horizontal complexity.
Data Source
AI summary
In one aspect a semiconductor device as set forth herein can include a spacer having a first section of a first material and a second section of a second material, the second section disposed above a certain elevation and the first section disposed below the certain elevation. In one aspect a semiconductor device as set forth herein can include a conductive gate structure having a first length at elevations below a certain elevation and a second length at elevations above the certain elevation, the second length being less than the first length. A semiconductor device having one or more of a plural material spacer or a reduced length upper elevation conductive gate structure can feature a reduced likelihood of electrical shorting.