Semiconductor Package with Segmented Substrates for High I/O Yield
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Solution Overview
Problem
The increasing number of input/output (I/O) connections in semiconductor chips leads to thicker semiconductor substrates and reduced yield due to the need for more circuit layers, which increases manufacturing costs and complexity.
Innovation Solution
A semiconductor device package with a lower-density substrate and higher-density substrate layers, where the higher-density substrate has a plurality of dielectric and interconnection layers with through vias that maintain an aspect ratio of 1:2 or less, allowing for reduced thickness and improved yield while maintaining electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of circuit layers is increased to accommodate more I/O connections, then the electrical performance and functionality are improved, but the substrate thickness increases and manufacturing yield decreases
Solution Approach 1:
The patent divides the circuit layers into two separate substrates (first substrate and second substrate) instead of stacking all circuit layers on a single thick substrate. The first substrate carries initial circuit layers and bonding pads, while the second substrate carries additional circuit layers and I/O connections. This segmentation allows each substrate to maintain manageable thickness while collectively providing high I/O capacity, thereby improving manufacturing yield without sacrificing adaptability.
Solution Approach 2:
The patent transitions from a single-substrate vertical stacking approach to a multi-substrate stacked configuration with controlled thickness. By using multiple thinner substrates bonded together, the solution achieves high I/O capacity in the vertical dimension while keeping individual substrate thicknesses within manufacturable ranges, thus resolving the contradiction between I/O expansion and manufacturing yield.
2Adaptability or versatility
If the substrate thickness is increased to accommodate more circuit layers, then more I/O connections are achieved, but the manufacturing cost and complexity increase
Solution Approach 1:
The patent segments the thick substrate into two thinner substrates bonded together. Each substrate has a manageable thickness that simplifies manufacturing processes, while the bonding interface between substrates provides the necessary electrical connections. This segmentation reduces individual substrate complexity while achieving the required I/O capacity through the combined structure.
Solution Approach 2:
The patent employs a nested structure where the first substrate and second substrate are bonded together, with the second substrate positioned on top of the first substrate. This nesting approach allows the system to achieve high I/O capacity without requiring any single substrate to be excessively thick or complex, as the functionality is distributed across the nested layers.
3Adaptability or versatility
If the number of circuit layers is increased to achieve more I/O connections, then the functionality is improved, but the substrate thickness increases
Solution Approach 1:
The patent divides the circuit layers into two separate substrates, each with controlled thickness. The first substrate has a first thickness and the second substrate has a second thickness, both of which are smaller than what would be required for a single substrate to accommodate all circuit layers. This segmentation reduces the maximum substrate thickness while maintaining the total number of I/O connections through the combined structure.
Solution Approach 2:
The patent uses a multi-substrate stacked configuration to achieve high I/O capacity in the vertical dimension without requiring any single substrate to be excessively thick. By distributing circuit layers across multiple substrates bonded together, the solution maintains manageable substrate thickness while achieving the required functionality.
Data Source
AI summary
A semiconductor device package includes a substrate, a first circuit layer and a second circuit layer. The first circuit layer is disposed on the substrate. The first circuit layer has a plurality of dielectric layers and a first through via penetrating the dielectric layers and electrically connected to the substrate. The second circuit layer is disposed on the first circuit layer. The second circuit layer has a plurality of dielectric layers and a second through via penetrating the dielectric layers and electrically connected to the first circuit layer.