SEM Image Distortion for Semiconductor Conductivity Measurement

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Solution Overview

Problem

Existing methods for measuring electrical conductivity in semiconductor substrates require a separate region for measurement, which differs from the actual device operation and necessitate additional steps, leading to inaccuracies.

Innovation Solution

An electrical conductivity measurement device and method using a scanning electron microscope (SEM) to calculate image shape distortion caused by electrical potential differences, allowing conductivity measurement directly in the operating region of the semiconductor substrate without additional steps.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a contact probe is used to measure electrical conductivity in a separate pattern region, then the measurement can be performed, but the measurement region differs from the actual device operation region and requires additional measurement patterns

Engineering Contradiction:
Improveelectrical conductivity measurement accuracyVSAvoidseparate measurement pattern requirement
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The invention merges the device inspection function and electrical conductivity measurement function into a single integrated process. The SEM inspection system that normally examines device structures is combined with conductivity measurement capabilities, allowing both structural inspection and electrical property measurement to be performed on the same device region without requiring separate measurement patterns or additional device areas.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The inspection system is enhanced with multi-functionality by integrating conductivity measurement capabilities into the existing SEM inspection apparatus. The same electron beam and detection systems used for structural inspection are also utilized for measuring electrical conductivity, allowing a single system to perform multiple functions (structural examination and electrical characterization) on the device under test.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Measurement precision

If a separate measurement region is used for conductivity measurement, then the measurement can be performed, but it requires additional steps and time

Engineering Contradiction:
Improveelectrical conductivity measurementVSAvoidmeasurement process time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The inspection process and conductivity measurement process are merged into a single operational sequence. The system performs both structural inspection and electrical conductivity measurement on the same device region during the same operational cycle, eliminating the need for separate measurement steps and reducing total process time.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The system performs preliminary characterization of the device region during the inspection phase, gathering both structural and electrical property data in advance. This preliminary action during inspection eliminates the need for subsequent separate measurement steps, as the conductivity information is already obtained during the initial examination.

Inventive Principle:
Principle #10Preliminary action

3Measurement precision

If conventional measurement methods are used, then electrical conductivity can be measured, but with lower resolution compared to SEM image measurement size

Engineering Contradiction:
Improveelectrical conductivity measurement accuracyVSAvoidmeasurement resolution
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The high-resolution SEM imaging system, originally designed for structural inspection at sub-micrometer scales, is utilized for conductivity measurement. This leverages the existing high spatial resolution capability of the inspection system to achieve precise localized conductivity measurements that match the resolution level of structural examinations.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The measurement approach changes from conventional contact-based electrical measurement to a field-based measurement using electron beam interaction. By changing the measurement parameter from physical contact to electron beam induced electrical potential detection, the system achieves measurement resolution consistent with the electron beam's spatial resolution capabilities.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables precise electrical conductivity measurement with a resolution of less than 1 micrometer, eliminating the need for separate measurement regions and providing accurate conductivity data directly from SEM inspection.

Implementation Method 1

a scanning electron microscope configured to obtain a scanning electron microscope (SEM) image of a surface of a semiconductor substrate by scanning the surface of the semiconductor substrate with a focused electron beam

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Implementation Method 2

calculating an image shape distortion caused by an electrical potential difference during scanning electron microscope (SEM) measurement

Methodology Applied
Scientific EffectElectrical potential difference: Electric Field

Data Source

PatentUS20250306070A1Apparatus and method for measuring electrical conductivity of semiconductor substrate
Publication Date: 2025.10.02 SAMSUNG ELECTRONICS CO LTD
  • US20250306070A1 patent drawing
  • US20250306070A1 patent drawing
  • US20250306070A1 patent drawing

AI summary

An electrical conductivity measuring method of a semiconductor substrate according to an embodiment includes: producing a scanning electron microscope (SEM) image of a standard sample using a scanning electron microscope; producing a SEM image of a surface of the semiconductor substrate with the scanning electron microscope; calculating a degree of image distortion by comparing the SEM image of the standard sample and the SEM image of the semiconductor substrate surface; and evaluating the electrical conductivity of the semiconductor substrate based on the degree of image distortion.