Semiconductor Device Carrier Clearance for Sense Current Detection
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Solution Overview
Problem
The existing semiconductor device faces challenges in accurately detecting currents through sense IGBT and sense diode regions due to current interference, which affects the detection accuracy.
Innovation Solution
The semiconductor device is designed with specific structural configurations, including smaller areas for sense IGBT and sense diode regions, strategically placed n-type regions, and clearance distances that suppress carrier movement between regions, preventing current interference. This includes an n-type region across the sense IGBT and sense diode regions, and an insulating layer or high-density n-type regions between the IGBT and diode drift regions to prevent carrier flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If sense IGBT and sense diode are provided in the same semiconductor substrate, then current detection capability is improved, but current interference between regions occurs reducing detection accuracy
Solution Approach 1:
The semiconductor substrate is divided into distinct main regions and sense regions, with further segmentation into IGBT and diode regions. This spatial segmentation allows independent detection of different current types while maintaining physical separation to prevent interference between sense elements.
Solution Approach 2:
Different regions are assigned specific doping characteristics (n-type or p-type) and structural properties tailored to their function. The sense regions have optimized local properties including controlled clearance distances and doping concentrations that differ from main regions, enabling accurate current detection without interference.
2Area of stationary object
If clearance between regions is reduced, then device area is reduced, but carrier movement between regions increases causing current interference
Solution Approach 1:
The clearance distances between regions are precisely controlled to exceed specific thresholds determined by carrier mobility and lifetime parameters. This parameter optimization ensures that while the device area is minimized, the clearance is sufficient to suppress carrier diffusion and drift between adjacent regions, preventing current interference.
3Ease of manufacture
If n-type region is provided across sense regions, then structural integration is improved, but carrier diffusion between IGBT and diode regions may occur
Solution Approach 1:
The n-type region is provided with locally optimized properties including specific doping concentrations and clearance distances to adjacent regions. These local quality adjustments ensure that while the n-type region provides structural integration across sense regions, carrier diffusion between IGBT and diode regions is suppressed through controlled geometric and electrical parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses current interference between the sense IGBT and sense diode regions, allowing for accurate detection of currents in each region, aligning the current ratios with their respective area ratios, thus enhancing detection accuracy.
Implementation Method 1
the clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. Accordingly, movement of carriers between the body region and the anode region is suppressed.
Implementation Method 2
the clearance between the anode region and the collector region is longer than a product of electron mobility and electron lifetime in the n-type region between the anode region and the collector region. Accordingly, movement of carriers between the anode region and the collector region is suppressed.
Implementation Method 3
the clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region. the movement of carriers between the cathode and the body region is suppressed.
Data Source
AI summary
A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided. A clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. A clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region.