Semiconductor Sensing Circuit for Alpha Particle Detection

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Solution Overview

Problem

Small semiconductor devices face challenges in achieving high reliability due to vulnerability to external influences like alpha particles and photons, which can cause improper operation, particularly in critical applications such as automotive and avionics where high reliability is required.

Innovation Solution

A semiconductor device with a protection/detection circuit is designed to detect the presence of external influences by forming a sensing circuit that applies a voltage to expand the depletion region and detect electrons, allowing for the assertion of a detection signal to mitigate operational effects, thereby enhancing reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of moving object

If semiconductor devices are reduced in size to increase integration density, then device area and cost are reduced, but reliability deteriorates due to increased vulnerability to external influences such as alpha particles and photons

Engineering Contradiction:
Improvedevice areaVSAvoidoperational reliability
Core Design Contradiction:
Area of moving objectVSReliability

Solution Approach 1:

The patent segments the semiconductor device into functional circuits and protection/detection circuits that operate independently. The protection circuits are divided into multiple sensing circuits that can detect different types of external influences (alpha particles, photons) separately, allowing targeted response to specific threats while maintaining overall device functionality.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces protection circuits as intermediary elements between the functional circuits and external influences. These protection circuits include sensing circuits that act as mediators to detect external particles and photons before they can directly affect the functional circuits, thereby preserving reliability without requiring larger device area.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If protection circuits are added to detect external influences, then reliability is improved, but device complexity and area increase

Engineering Contradiction:
Improveoperational reliabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the protection/detection circuitry with the existing functional circuits on the same semiconductor die. The sensing circuits are integrated alongside the functional circuits they protect, sharing common infrastructure such as power supply and signal routing, which reduces overall device complexity compared to separate protection systems.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The protection circuits are designed with multi-functionality to handle multiple types of external influences (alpha particles, photons, and other radiation) using the same sensing infrastructure. The sensing circuits can detect different particle types and trigger appropriate protection responses, reducing the need for separate specialized detection systems for each threat type.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively detects external influences and reduces their operational impact, improving the reliability of semiconductor devices by integrating sensing and functional circuits on the same die, reducing area and cost.

Implementation Method 1

a sensing circuit to apply a voltage to expand the depletion region within the second doped region and detect the electrons formed within the first doped region

Methodology Applied
Scientific EffectDepletion region expansion: Electric Field

Implementation Method 2

a first P-N junction formed at an interface between the first doped region and the second doped region, the first P-N junction having a depletion region

Methodology Applied
Scientific EffectP-N junction depletion: Electric Field

Data Source

PatentUS11031349B1Method of forming a semiconductor device and current sensing circuit therefor
Publication Date: 2021.06.08 SEMICON COMPONENTS IND LLC
  • US11031349B1 patent drawing
  • US11031349B1 patent drawing
  • US11031349B1 patent drawing

AI summary

In one embodiment, a method of forming a semiconductor device may include forming a sensing circuit to apply a voltage to a doped region wherein the voltage expands depletion region toward a second depletion region but substantially does not intersect the second depletion region. An embodiment may include configuring the sensing circuit to detect electrons within the doped region and to responsively assert a detection signal representing detection of the electrons wherein the sensing circuit detects the electrons while applying the voltage to the second doped region.