Semiconductor Sensing Element Direct Readout
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Solution Overview
Problem
Monitoring temperature sensors embedded in high-side IGBTs requires costly galvanic isolation methods, especially when multiple high-side and low-side semiconductors are used, as they operate at different voltage levels, necessitating additional components and space for signal transmission to ground-referenced processing devices.
Innovation Solution
Embedding or placing sensing elements adjacent to high-side and low-side semiconductors with direct connection to a processing device, utilizing isolation layers for voltage isolation, eliminating the need for galvanic isolation components like transformers or optocouplers, allowing for real-time monitoring without additional circuitry.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If galvanic isolation methods (optocoupler or pulse transformer) are used to monitor temperature sensors in high-side IGBTs, then the temperature signal can be transmitted to ground-referenced processing circuits, but additional components and space are required, increasing device complexity and cost
Solution Approach 1:
The patent extracts the high-side temperature signal from its high-voltage environment by using a dedicated signal path through the low-side driver, separating the temperature monitoring function from the high-voltage power switching function. This allows the temperature signal to be read at ground potential without requiring galvanic isolation components.
Solution Approach 2:
The low-side driver is given a dual function: it continues to drive the low-side IGBT while also serving as the readout path for the high-side temperature sensor. This multi-functionality eliminates the need for separate isolation components dedicated solely to temperature monitoring.
2Power
If multiple half bridges with high-side and low-side semiconductors are used, then the system can handle higher power loads, but the number of temperature sensors requiring monitoring increases, amplifying the need for costly galvanic isolation
Solution Approach 1:
Each low-side driver in the system serves dual purposes: driving its associated low-side IGBT and providing the signal path for reading the high-side temperature sensor. This universal approach scales efficiently with the number of half-bridges, avoiding linear increases in isolation component count.
Solution Approach 2:
The patent merges the low-side driver circuit with the high-side temperature readout path, combining two previously separate functions into a single integrated circuit. This merging eliminates redundant isolation components and reduces overall system complexity.
3Ease of operation
If an analog-to-digital converter is incorporated in the driver to digitize the temperature signal, then the temperature signal can be processed and transmitted via coreless transformer, but additional processing components are required
Solution Approach 1:
Instead of converting the temperature signal to digital form in the high-side driver and then transmitting it, the patent inverts the approach by reading the analog temperature signal directly through the low-side driver at ground potential, allowing the ground-referenced processing device to handle digitization and processing.
Data Source
AI summary
An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.