Semiconductor Temperature Sensor Isolation From Diode Lifetime Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in suppressing variations in temperature sensor characteristics, particularly due to the integration of temperature sensing units with other semiconductor elements like diodes and transistors, which affects accuracy and reliability.
Innovation Solution
The semiconductor device incorporates a temperature sensing unit adjacent to a diode section, with an upper lifetime control region and edge termination structure, and a specific fabrication method that forms the upper lifetime control region without overlapping with the temperature sensing unit, using a mask to prevent implantation of lifetime killers into the sensing unit, thereby maintaining its accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature sensing unit is integrated adjacent to a diode section in a semiconductor device, then temperature detection capability is improved, but variations in temperature sensor characteristics occur due to proximity to the diode section
Solution Approach 1:
An upper lifetime control region is introduced as an intermediary structure between the diode section and the temperature sensing unit. This region contains lifetime killers that control carrier lifetime in the diode section without affecting the temperature sensing unit, thereby mediating the interaction between these two components and preventing the diode's operational characteristics from interfering with temperature measurement accuracy
Solution Approach 2:
The semiconductor device is segmented into functionally distinct regions: a diode section for current conduction, a temperature sensing unit for temperature detection, and an upper lifetime control region that specifically manages carrier lifetime in the diode section. This segmentation allows each component to operate independently with optimized characteristics, preventing cross-interference while maintaining close proximity for effective temperature monitoring
2Loss of energy
If an upper lifetime control region is provided in the diode section to control carrier lifetime, then reverse recovery losses are reduced, but the temperature sensing unit may be affected by lifetime killer implantation
Solution Approach 1:
The upper lifetime control region is positioned to provide localized lifetime control specifically in the diode section where it is needed for reducing reverse recovery losses. The lifetime killers are concentrated in this region rather than being uniformly distributed, allowing precise control of carrier lifetime where it affects diode performance while leaving the temperature sensing unit's characteristics unchanged
Solution Approach 2:
The upper lifetime control region acts as a spatial intermediary that separates the lifetime control function from the temperature sensing function. By positioning the lifetime killers in a specific region adjacent to but distinct from the temperature sensing unit, the patent enables independent optimization of both diode efficiency and temperature measurement accuracy
3Measurement precision
If the temperature sensing unit is placed adjacent to the diode section for accurate temperature monitoring, then temperature detection capability is improved, but manufacturing precision requirements increase to prevent overlap
Solution Approach 1:
The upper lifetime control region is designed and positioned in advance during the fabrication process to establish clear spatial boundaries between the diode section and temperature sensing unit. This preliminary structuring of carrier lifetime control regions guides subsequent manufacturing steps, ensuring that lifetime killer implantation and other processing steps do not cause unwanted overlap or interference between adjacent components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses variations in temperature sensor characteristics by controlling carrier lifetimes in the diode section and preventing irradiation of the temperature sensing unit, ensuring accurate temperature detection and reduced reverse recovery losses.
Implementation Method 1
an upper lifetime control region that is provided in the diode section, in an upper surface side of the semiconductor substrate, and in a region not overlapping with the temperature sensing unit in top view
Implementation Method 2
a temperature sensing unit that is adjacent to the diode section in top view and is provided above a well region
Implementation Method 3
using a mask to prevent implantation of lifetime killers into the sensing unit
Data Source
AI summary
In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor. The semiconductor device is provided that includes a semiconductor substrate having a first conductivity type drift region, a transistor section provided in the semiconductor substrate, a diode section provided in the semiconductor substrate, a second conductivity type well region exposed at an upper surface of the semiconductor substrate, a temperature sensing unit that is adjacent to the diode section in top view and is provided above the well region, and an upper lifetime control region that is provided in the diode section, at the upper surface side of the semiconductor substrate, and in a region not overlapping with the temperature sensing unit in top view.