Power Semiconductor Module Temperature Sensor Placement

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Solution Overview

Problem

Power semiconductor modules face challenges in operating across a wide temperature range with low power margins, and existing methods for temperature sensing complicate electrical routing and increase stray inductance, often resulting in inaccurate or slow temperature readings.

Innovation Solution

A power semiconductor module design featuring a temperature sensor arranged between two substrates, with electrical contacts on opposing sides, allowing for accurate junction temperature measurement while minimizing electrical routing complexity and stray inductance, and a method for fabricating such modules that includes positioning the temperature sensor laterally or on top of the power semiconductor chip for efficient heat distribution and measurement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a temperature sensor is added to power semiconductor modules, then temperature measurement capability is improved, but electrical routing complexity and stray inductance increase

Engineering Contradiction:
Improvetemperature measurement capabilityVSAvoidelectrical routing complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The temperature sensor is integrated between the first and second substrates in close proximity to the power semiconductor chip, merging the sensing function into the existing module structure. This integration allows temperature measurement without adding separate external routing paths, thereby improving temperature measurement capability while minimizing increases in electrical routing complexity

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The temperature sensor acts as an intermediary element positioned between the substrates, enabling temperature measurement through the existing substrate structure. This intermediary placement allows the sensor to access thermal information from the power chip through conduction paths that already exist in the module, avoiding the need for additional electrical routing

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If a temperature sensor is added to power semiconductor modules, then temperature measurement capability is improved, but stray inductance increases

Engineering Contradiction:
Improvetemperature measurement capabilityVSAvoidstray inductance
Core Design Contradiction:
Measurement precisionVSLoss of energy

Solution Approach 1:

The temperature sensor is merged into the existing module structure between the substrates, utilizing existing thermal and electrical pathways. This merging approach enables temperature sensing while minimizing the introduction of additional current loops that would increase stray inductance

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The temperature sensor is positioned in the vertical dimension between the first and second substrates, rather than adding it in the lateral plane. This dimensional placement allows the sensor to be electrically connected through the substrate thickness direction, creating shorter current paths and reducing the area of current loops, thereby minimizing stray inductance

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Device complexity

If a temperature sensor is placed at the periphery of the power semiconductor module, then electrical routing complexity and stray inductance are reduced, but temperature reading accuracy and speed deteriorate

Engineering Contradiction:
Improveelectrical routing complexityVSAvoidtemperature reading accuracy
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The temperature sensor is positioned in advance in close proximity to the power semiconductor chip, between the substrates where thermal coupling is strongest. This preliminary placement ensures the sensor is already in optimal thermal contact with the power chip before operation, enabling fast and accurate temperature readings without requiring peripheral placement

Inventive Principle:
Principle #10Preliminary action

4Device complexity

If a temperature sensor is placed at the periphery of the power semiconductor module, then electrical routing complexity and stray inductance are reduced, but temperature reading speed deteriorates

Engineering Contradiction:
Improveelectrical routing complexityVSAvoidtemperature reading speed
Core Design Contradiction:
Device complexityVSSpeed

Solution Approach 1:

The temperature sensor is pre-positioned in the optimal thermal contact location between the substrates near the power chip. This preliminary placement ensures maximum thermal coupling from the start, enabling rapid temperature detection without the delays that would occur with peripheral placement where thermal paths are longer

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables precise and fast temperature measurement, reducing the need for large power margins and minimizing space requirements, thus enhancing the module's operational efficiency and cost-effectiveness across a wide temperature range.

Implementation Method 1

a temperature sensor arranged between the first and second substrates and laterally besides the power semiconductor chip

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11610830B2Power semiconductor module and method for fabricating the same
Publication Date: 2023.03.21 INFINEON TECHNOLOGIES AG
  • US11610830B2 patent drawing
  • US11610830B2 patent drawing
  • US11610830B2 patent drawing

AI summary

A power semiconductor module includes a power semiconductor chip arranged between a first substrate and a second substrate and electrically coupled to the substrates, and a temperature sensor arranged between the substrates and laterally besides the power semiconductor chip such that a first side of the temperature sensor faces the first substrate and a second side of the temperature sensor faces the second substrate. A first electrical contact of the temperature sensor is arranged on the first side and electrically coupled to the first substrate. A second electrical contact of the temperature sensor is arranged on the second side and electrically coupled to the second substrate.