Semiconductor Sensor Device Thin-Film Bonding Thermal Stress

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Solution Overview

Problem

The existing methods for fixing semiconductor sensor chips on stainless pedestals using silicon-based adhesives or solders result in inaccurate distortion transmission and thermal stress, leading to device deterioration, especially when exposed to high temperatures.

Innovation Solution

A semiconductor sensor device is fabricated using thin films on both the sensor chip and the stainless pedestal, with mirror-polished surfaces and specific film thicknesses to achieve strong atomic bonding, eliminating the need for thick fixing materials and minimizing thermal stress.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If silicon-based adhesive or solder is used to fix the sensor chip on the stainless pedestal, then the chip is securely fixed, but the distortion of the stainless pedestal cannot be accurately transmitted to the sensor chip due to the thickness of the fixing material

Engineering Contradiction:
Improvedistortion transmission accuracyVSAvoidfixing material thickness
Core Design Contradiction:
Measurement precisionVSLength of stationary object

Solution Approach 1:

The patent removes the thick silicon-based adhesive or solder layer that was previously used for fixing the sensor chip. By eliminating this thick fixing material, the distortion transmission path is shortened, allowing accurate transmission of pedestal distortion to the sensor chip while maintaining secure fixation through the thin-film bonding structure.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent employs thin-film materials for both the fixing layer and the distortion transmission layer. These thin films are sufficiently thin to transmit distortion accurately while providing adequate mechanical bonding, replacing the traditional thick adhesive or solder approach.

Inventive Principle:
Principle #30Flexible shells and thin films

2Reliability

If silicon-based adhesive or solder is used to fix the sensor chip, then the chip is securely fixed, but the fixing material creeps and alleviates distortion at high temperatures, deteriorating sensor performance

Engineering Contradiction:
Improvesensor performance stabilityVSAvoidhigh temperature exposure
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent changes the material parameters by selecting thin-film materials with appropriate thermal and mechanical properties that resist creep at high temperatures. The thin-film structure maintains its bonding strength and dimensional stability under thermal stress, preventing the distortion alleviation that occurs with conventional adhesive or solder.

Inventive Principle:
Principle #35Parameter changes

3Strength

If the sensor chip is fixed at high temperature to ensure strong bonding, then the bond strength is improved, but thermal stress varies the silicon chip properties and deteriorates the sensor

Engineering Contradiction:
Improvebond strengthVSAvoidbonding temperature
Core Design Contradiction:
StrengthVSTemperature

Solution Approach 1:

The patent uses thin-film materials for bonding that can achieve strong adhesion at lower temperatures compared to traditional soldering or brazing methods. The thin-film structure provides sufficient bonding strength while minimizing the thermal stress exposure of the silicon chip, thereby preserving sensor properties.

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for accurate distortion transmission and reduces thermal stress, resulting in a high-performance semiconductor sensor device with improved reliability and durability across varying temperatures.

Implementation Method 1

achieve strong atomic bonding

Methodology Applied
Scientific EffectAtomic bonding: Chemical Bonding

Implementation Method 2

a solid-phase-diffusion welding process operating at atomic distances

Methodology Applied
Scientific EffectSolid-phase-diffusion welding: Diffusion Welding

Data Source

PatentEP3358327B1Semiconductor sensor device and method for manufacturing same
Publication Date: 2022.04.27 ASTEMO LTD
  • EP3358327B1 patent drawingFigure 1
  • EP3358327B1 patent drawingFigure 2
  • EP3358327B1 patent drawingFigure 3(1)~3(3)

AI summary

To provide a high-performance semiconductor sensor device and a method for manufacturing the semiconductor sensor device. This semiconductor sensor device has a sensor chip, and a first thin film formed on the sensor chip, said sensor chip being mechanically connected, via the first thin film, to a second thin film formed on a base formed of a polycrystalline material.