Semiconductor Separation Layer Oxidation for 3D Stacking
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Solution Overview
Problem
In the manufacturing of semiconductor devices, the separation of semiconductor elements from insulating substrates is often hindered by strong adhesion between metal film separation layers and connection wiring, leading to incomplete separation and exposure issues, which can prevent the electrical connection necessary for stacking and forming three-dimensional semiconductor devices.
Innovation Solution
A method involving the formation of through holes in insulating layers to expose the separation layer, followed by an oxidation process using hydrogen peroxide solutions or oxygen plasma to reduce adhesion, allowing complete separation of semiconductor elements and exposure of connection wiring, enabling successful stacking and electrical connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal films are used for the separation layer and connection wiring, then electrical conductivity and structural integrity are improved, but adhesion between the separation layer and connection wiring increases, preventing complete separation and exposure of the connection wiring
Solution Approach 1:
The patent applies preliminary action by performing an oxidation treatment on the separation layer surface before the separation process. This pre-treatment modifies the surface properties of the metal film separation layer, reducing its adhesion to the connection wiring in advance, which enables complete separation and exposure of the connection wiring while maintaining the structural integrity and electrical conductivity of the metal films throughout the manufacturing process
2Strength
If the separation layer and connection wiring are made from metal films, then mechanical strength is improved, but the separation layer and connection wiring firmly adhere to each other, preventing complete separation of the semiconductor element from the substrate
Solution Approach 1:
The patent applies parameter changes by modifying the surface chemical properties of the metal film separation layer through oxidation treatment. This changes the surface energy and adhesion characteristics of the separation layer, reducing its bonding strength to the connection wiring while maintaining the overall mechanical strength of the metal film layers, thereby enabling complete separation and achieving high manufacturing precision in the separation process
3Stability of the object's composition
If the separation layer and connection wiring firmly adhere to each other, then structural stability is improved, but the connection wiring is not exposed at the separation surface, preventing electrical connection to stacked elements
Solution Approach 1:
The patent applies local quality by creating a localized difference in adhesion properties between the bulk metal film separation layer and its surface. The oxidation treatment modifies only the surface region of the separation layer, making it less adhesive to the connection wiring, while the bulk material retains its structural stability. This localized property change enables the connection wiring to be exposed at the separation surface, ensuring reliable electrical connection for stacked elements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses incomplete separation and enhances the reliability of semiconductor devices by ensuring proper exposure and electrical connectivity of the connection wiring, facilitating the manufacture of three-dimensional semiconductor devices.
Implementation Method 1
the exposed surface of the separation layer is subjected to an oxidation process. Through this process, the adhesion between the exposed surface of the separation layer and the connection wiring can be lowered
Implementation Method 2
A method involving the formation of through holes in insulating layers to expose the separation layer, followed by an oxidation process using hydrogen peroxide solutions or oxygen plasma to reduce adhesion
Data Source
AI summary
A method for manufacturing a semiconductor device includes: forming a first and second layers not firmly adhering to each other over a substrate; forming a first semiconductor element layer and a first insulating layer over the second layer; forming a hole reaching the first layer in the first insulating layer; oxidizing the first layer exposed at a bottom of the hole; forming a wiring electrically connected to the first semiconductor element layer over the first insulating layer and in the hole; and separating the first layer and the substrate from the second layer and the first semiconductor element layer and expose the wiring. Further, another method includes providing an anisotropic conductive adhesive between a second semiconductor element layer separated through a manufacturing process similar to the above and the wiring, whereby the first and second semiconductor element layers are electrically connected through the anisotropic conductive adhesive and the wiring.