Semiconductor Device Separation Layer Oxygen Treatment
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high reliability, favorable electrical characteristics, miniaturization, and reduced characteristic variation, particularly in transistors using oxide semiconductors, due to issues with impurity and oxygen vacancy-related defects.
Innovation Solution
A semiconductor device design featuring a source electrode and drain electrode overlapping a semiconductor layer with a separation layer in between, where oxygen is introduced to form the separation layer, and a gate electrode is positioned with a gate insulating layer, using an oxide semiconductor with reduced impurities and oxygen vacancies to enhance electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a transistor is manufactured using conventional oxide semiconductor materials, then the device can be fabricated with existing processes, but impurity and oxygen vacancy-related defects degrade reliability and electrical characteristics
Solution Approach 1:
The patent applies preliminary action by forming the separation layer between source and drain electrodes before fabricating the transistor channel. This separation layer, containing metal elements from the electrodes, is created in advance to prevent impurity and oxygen vacancy defects from forming during subsequent processing steps, thereby improving device reliability while avoiding harmful defects
Solution Approach 2:
The separation layer acts as an intermediary between the source/drain electrodes and the semiconductor layer. It contains metal elements (such as In, Ga, Zn) that are introduced from the electrodes during oxygen introduction treatment, serving as a buffer that prevents direct harmful interactions and reduces defect formation at the electrode-semiconductor interface
2Productivity
If the transistor size is reduced to achieve high density integration, then productivity and integration density improve, but characteristic variation increases and manufacturing precision becomes more difficult to control
Solution Approach 1:
The patent applies local quality by creating a separation layer with specific local composition and properties between the source and drain electrodes. This localized structure with metal elements (In, Ga, Zn) in controlled concentrations provides uniform electrical characteristics across miniaturized devices, reducing characteristic variation while enabling high density integration
Solution Approach 2:
The patent utilizes parameter changes by controlling the thickness and composition of the separation layer, as well as the concentration of metal elements introduced during oxygen treatment. By optimizing these parameters (layer thickness, metal concentration, oxygen dosage), the invention achieves reduced characteristic variation in miniaturized transistors while maintaining high integration density
3Reliability
If oxygen is introduced to form the separation layer, then reliability and electrical characteristics improve, but the manufacturing process complexity increases
Solution Approach 1:
The patent merges multiple functions into the separation layer formation step. The oxygen introduction treatment simultaneously creates the separation layer structure, introduces beneficial metal elements (In, Ga, Zn) from the electrodes, and prevents harmful defects. This combined approach improves electrical characteristics while avoiding the need for separate complex processing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a semiconductor device with improved reliability, favorable electrical characteristics, and reduced characteristic variation, enabling miniaturization and high integration while maintaining low leakage current and high on/off ratio.
Implementation Method 1
introducing oxygen to a part of the source electrode and a part of the drain electrode that overlap the semiconductor layer to form the separation layer
Data Source
AI summary
A highly reliable semiconductor device with stable electrical characteristics and a method for manufacturing the semiconductor device are provided. A separation layer is formed between a source electrode and a drain electrode. The separation layer is formed using a material having a high insulating property. The separation layer between the source electrode and the drain electrode can reduce a difference in level of each of the source electrode and the drain electrode, which can improve coverage with a layer formed over the source electrode and the drain electrode. The separation layer between the source electrode and the drain electrode can prevent an unintended electrical short circuit of the source electrode and the drain electrode. The separation layer can be formed by introducing oxygen to a conductive layer.