Semiconductor Separation Lines for Stacked Gate Integration
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Solution Overview
Problem
The increasing demand for higher integration in semiconductor devices poses challenges in maintaining yield and productivity, particularly in three-dimensional semiconductor devices with stacked gate structures, where the complexity of the stacked structure and the need for precise separation lines complicate the manufacturing process.
Innovation Solution
A semiconductor device design that incorporates a stacked structure with multiple gate electrodes, featuring main and secondary separation lines passing through the structure, and a second structure formed of the same material, extending outside the stacked structure to improve yield and productivity by enhancing the integration and reliability of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacked gates is increased to improve integration degree, then the integration degree is improved, but the manufacturing complexity and difficulty of forming separation lines increase
Solution Approach 1:
The separation lines are divided into multiple segments corresponding to different stacked gate regions. Each separation line is formed independently through separate photolithography and etching processes, allowing the manufacturing process to handle high integration without requiring a single complex patterning step for all separation lines.
Solution Approach 2:
The separation lines are formed before the stacked gate electrodes are completely assembled. This preliminary formation of separation lines simplifies subsequent manufacturing steps by providing pre-defined isolation regions, reducing the overall manufacturing complexity despite high integration requirements.
2Manufacturing precision
If more separation lines are added to separate stacked gate electrodes, then the separation precision is improved, but the manufacturing process complexity increases
Solution Approach 1:
The separation lines are segmented into multiple independent lines rather than forming a single continuous complex pattern. Each separation line can be formed using standard photolithography techniques, maintaining manufacturing precision while avoiding the need for complex multi-layer alignment processes.
Solution Approach 2:
Different separation lines are positioned at specific locations where separation is most needed, rather than uniformly distributing them. This local quality approach ensures high separation precision at critical interfaces while minimizing the total number of separation lines, thus reducing process complexity.
Data Source
AI summary
A semiconductor device includes a stacked structure disposed on a substrate. The stacked structure includes a plurality of gate electrodes. The semiconductor device further includes a first structure disposed on the substrate and passing through the stacked structure, and a second structure disposed on the substrate. The second structure is disposed outside of the stacked structure, faces the first structure, and is spaced apart from the first structure. The first structure includes a plurality of separation lines passing through at least a portion of the plurality of gate electrodes and extending outside of the stacked structure, and the second structure is formed of the same material as the first structure.