Semiconductor Circuitry with Series Diodes for Reverse Bias Control
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Solution Overview
Problem
High reverse bias voltage in semiconductor circuits reduces reliability and increases defect rates, particularly in power semiconductor elements, and existing technologies fail to effectively manage bias voltage during operation suspension periods, leading to potential SEB breakage and power loss.
Innovation Solution
Incorporating a series connection of diodes with controlled breakdown voltages in parallel with transistors and a resistor to limit drain-source voltage during operation suspension periods, ensuring that the sum of diode breakdown voltages exceeds the power supply voltage, thereby reducing reverse bias voltage and preventing excessive power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If reverse bias voltage is increased in power semiconductor elements, then the power supply voltage can be higher, but the reliability of the circuit decreases and defect rate increases
Solution Approach 1:
The patent divides the voltage blocking function into multiple diodes connected in series, where each diode handles a portion of the total reverse bias voltage. This segmentation allows the circuit to withstand high power supply voltages while each individual diode operates within safe voltage limits, preventing SEB breakage and maintaining reliability.
Solution Approach 2:
The patent introduces diodes as intermediary components between the power supply and the transistors. These diodes act as voltage distributors that share the reverse bias voltage across multiple elements, protecting the transistors from excessive voltage stress during operation suspension periods while enabling higher overall power supply voltage.
2Device complexity
If reverse bias voltage is applied between power terminals during operation suspension period, then the circuit can be simplified, but excessive power loss occurs due to high drain-source voltage
Solution Approach 1:
The patent applies preliminary action by pre-configuring diodes in parallel with transistor branches before the operation suspension period begins. These diodes are reversely biased in advance to establish voltage distribution, preventing excessive drain-source voltage from developing during the suspension period when transistors are off, thereby reducing power loss without adding complex control circuitry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces reverse bias voltage between transistors during suspension periods, enhancing circuit reliability and minimizing power loss by maintaining drain-source voltages below specific thresholds, thus improving overall semiconductor circuit performance.
Implementation Method 1
breakdown voltage of each diode is lower than a voltage of the power supply and the sum of breakdown voltage of all these diodes is higher than the voltage of the power supply
Data Source
AI summary
A semiconductor circuitry includes a plurality of diodes and a first resister. The semiconductor circuitry is arranged in a circuit in which a first transistor and a second transistor are connected to a power supply in series, and the circuit outputs a voltage applied to an external load. The plurality of diodes which are connected in parallel with a first transistor and a second transistor, are diodes to which a reverse bias is applied by the power supply, and are connected in series with each other, and in which each breakdown voltage is lower than a voltage of the power supply and the sum of breakdown voltage of all these diodes is higher than the voltage of the power supply. The first resistor which connects a connection node between the plurality of diodes and a connection node between the first transistor and the second transistor.