Semiconductor Device Structure With Shared Gate Components
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Solution Overview
Problem
Existing semiconductor devices face challenges in generating precise and stable reference voltages with low power consumption and reduced sensitivity to supply voltage and temperature variations, particularly in digital and analog circuits.
Innovation Solution
The semiconductor device incorporates multiple reference voltage circuits formed using transistor pairs with different threshold voltage combinations, where the operations for non-reference voltage circuits are adapted to create various reference voltage levels without additional masks or operations, utilizing identical or partial components to achieve multiple reference voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple reference voltage circuits are generated using different transistor threshold voltage combinations, then multiple reference voltage levels can be achieved, but additional masks or manufacturing operations would be required
Solution Approach 1:
The patent applies universality by designing a single gate structure that can serve multiple functions - generating different reference voltage levels through different transistor pairs within the same circuit block. The same physical structure is used to generate multiple reference voltages (e.g., Vref1, Vref2, Vref3) by utilizing transistor pairs with different threshold voltage combinations, eliminating the need for separate manufacturing processes for each reference voltage level.
Solution Approach 2:
The patent merges multiple reference voltage generation functions into a single integrated circuit block. Instead of creating separate circuits for different reference voltages, the design combines multiple transistor pairs (first transistor pair, second transistor pair, third transistor pair) within one gate structure, allowing simultaneous generation of multiple reference voltage levels from a unified physical structure.
2Reliability
If conventional reference voltage circuits are used, then reference voltage can be generated, but power consumption is high and sensitivity to supply voltage and temperature variations is significant
Solution Approach 1:
The patent applies parameter changes by utilizing transistor pairs with different threshold voltage parameters (first threshold voltage, second threshold voltage, third threshold voltage) to generate different reference voltage levels. By changing the threshold voltage parameter through transistor selection rather than adding circuit complexity, the design achieves multiple reference voltages with improved power efficiency and reduced sensitivity to supply voltage and temperature variations.
3Object-affected harmful factors
If transistor pairs with different threshold voltage combinations are used, then reference voltage sensitivity to voltage and temperature variations is reduced, but circuit design complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the reference voltage generation function into multiple independent transistor pairs, each responsible for generating a specific reference voltage level. The first transistor pair generates a first reference voltage, the second transistor pair generates a second reference voltage, and the third transistor pair generates a third reference voltage. This segmentation allows each pair to be optimized for specific threshold voltage characteristics, reducing sensitivity to variations while maintaining manageable design complexity through modular organization.
Data Source
AI summary
A semiconductor device includes a first a first transistor configured to operate at a first threshold voltage level. The first transistor includes a first gate structure and a first drain terminal electrically coupled to the first gate structure. The semiconductor device also includes a second transistor configured to operate at a second threshold voltage level different from the first threshold voltage level. The second transistor includes a second source terminal and a second gate structure electrically coupled to the first gate structure. The first gate structure and the second gate structure comprise a first component in common, and the second gate structure further includes at least one extra component disposed over the first component. The number of the at least one extra component is determined by a desired voltage difference between the first threshold voltage level and the second threshold voltage level.