Semiconductor Cell and Ballast Resistor Layout With Shared Masking
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Solution Overview
Problem
The high manufacturing cost of semiconductor devices due to the requirement of a photomechanical process bath in forming the cell region and contact area, which increases production expenses.
Innovation Solution
A semiconductor device design that integrates a semiconductor substrate with defined cell, ballast resistor, and termination regions, utilizing a first and second insulating film, and impurity layers to reduce the need for dedicated masks and processes, thereby simplifying the manufacturing process and lowering costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a photomechanical process is used to form the cell region and contact area, then the breakdown resistance and heat dissipation properties are improved, but the manufacturing cost increases
Solution Approach 1:
The patent combines the cell region formation and contact area formation into a single photomechanical process step by using one mask pattern that defines both the cell region boundaries and the contact area positions. This merging of previously separate processes reduces manufacturing complexity and cost while maintaining the functional requirements for current suppression and heat dissipation.
Solution Approach 2:
The mask pattern serves multiple functions simultaneously: it defines the cell region boundaries, positions the contact areas, and establishes the spacing required for current suppression. This multi-functionality eliminates the need for separate dedicated masks and processes, reducing manufacturing cost while achieving the same reliability improvements.
2Temperature
If a photomechanical process is used to form the cell region and contact area, then the heat generation suppression is improved, but the manufacturing complexity increases
Solution Approach 1:
The patent merges the heat generation suppression function into the standard cell region formation process by incorporating contact area positioning into the same mask pattern. This eliminates additional manufacturing steps while maintaining the heat dissipation performance through proper spacing of conductive structures.
Solution Approach 2:
The single mask pattern performs multiple functions: it creates the cell region structure for normal operation and simultaneously positions contact areas that suppress heat generation during recovery. This universal approach reduces manufacturing process complexity while achieving thermal management goals.
Data Source
AI summary
According to the present disclosure, a semiconductor device includes a semiconductor substrate of a first conductivity type, in which a cell region, a ballast resistor region, and a termination region surrounding the ballast resistor region are defined, a first insulating film arranged on a front surface of the semiconductor substrate, having a first opening in the cell region, and having at least one second opening in the ballast resistor region, a second insulating film filled in the at least one second opening, a first impurity layer of a second conductivity type arranged on the front surface of the semiconductor substrate below the first opening, and a second impurity layer of the second conductivity type arranged on the front surface of the semiconductor substrate below the at least one second opening, a conductive film arranged from the front surface of the first opening of the semiconductor substrate to the termination region.