Semiconductor Device Electromagnetic Shield Layer Eddy Current Control
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Solution Overview
Problem
In semiconductor devices, the magnetic field induced by high-frequency interconnects causes eddy currents in both the pads and the base substrate, leading to variations in circuit constants, especially when the semiconductor chip is mounted face down, and the shortening of bump distances exacerbates this issue, affecting transmission characteristics.
Innovation Solution
An electromagnetic shield layer is provided between the high-frequency interconnect and the base substrate's interconnects to limit the influence of eddy currents on the high-frequency interconnect, improving design flexibility and stabilizing transmission characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the semiconductor chip is mounted face down onto the base substrate, then the distance between the high-frequency interconnect and the base substrate is shortened, but the eddy current induction in the base substrate interconnects is exacerbated, causing variation in circuit constants
Solution Approach 1:
An electromagnetic shield layer is introduced as an intermediary component between the high-frequency interconnect and the base substrate interconnects. This shield layer blocks the magnetic field generated by the high-frequency interconnect from inducing eddy currents in the base substrate interconnects, thereby preventing circuit constant variation while allowing the short distance mounting configuration to be maintained.
2Object-generated harmful factors
If pads are eliminated from underneath the high-frequency interconnect, then eddy current induction in the pads is prevented, but eddy current induction in the base substrate interconnects remains, causing transmission characteristic deterioration
Solution Approach 1:
The electromagnetic shield layer serves as a mediator that blocks magnetic field lines from reaching the base substrate interconnects. This prevents eddy current induction in these interconnects, thereby maintaining stable transmission characteristics even when pads are eliminated from underneath the high-frequency interconnect.
3Productivity
If the bump size is reduced for downsizing, then the mounting density is increased, but the distance between the high-frequency interconnect and the base substrate becomes shorter, exacerbating eddy current effects
Solution Approach 1:
The electromagnetic shield layer is positioned between the high-frequency interconnect and the base substrate, acting as a barrier that prevents magnetic field penetration. This allows the use of smaller bumps for higher mounting density while maintaining stable circuit performance by blocking the harmful eddy current induction that would otherwise occur at shorter distances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The electromagnetic shield layer effectively reduces the impact of eddy currents on the high-frequency interconnect, stabilizing its transmission characteristics and maintaining performance across different base substrate configurations, particularly at higher frequencies and shorter bump heights.
Implementation Method 1
An electromagnetic shield layer is provided between the high-frequency interconnect and the interconnect of the base substrate
Implementation Method 2
a magnetic field caused by the high-frequency interconnect 116 induces an eddy current in the associated pads 118 that are disposed under the high-frequency interconnect 116
Implementation Method 3
a magnetic field is induced by Lenz's Law in a direction such that the induced magnetic field opposes the original magnetic field
Data Source
AI summary
Disclosed is a semiconductor device which includes a semiconductor chip and a base substrate. The semiconductor chip includes a semiconductor substrate, an interconnect layer and a high-frequency interconnect. The interconnect layer is provided on the substrate. The high-frequency interconnect is formed within the interconnect layer. The semiconductor chip is mounted onto the base substrate. An electromagnetic shield layer is provided between the high-frequency interconnect and the interconnect.