Semiconductor Shield Layout With Variable Thickness to Limit Warp
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Solution Overview
Problem
The formation of thick rewiring on semiconductor substrates to suppress electromagnetic noise leads to substrate warping, exceeding allowable limits and causing manufacturing defects such as suction errors and off-focus issues in photolithography processes.
Innovation Solution
A semiconductor device with a lower insulating layer, a sealing layer, and a conductive member comprising a first and second conductive member with different film thicknesses, where the shield portion is separated from the wiring layer by a prescribed distance, reducing the pattern ratio and subsequent substrate warping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If thick rewiring is formed on the entire surface of the semiconductor substrate to form the shield, then electromagnetic noise suppression is improved, but the amount of warp in the semiconductor substrate increases
Solution Approach 1:
The shield is formed with different film thicknesses in different regions: a first film thickness in the central region and a second film thickness (smaller than the first) in the peripheral region. This local variation in thickness allows the shield to provide adequate electromagnetic noise suppression where needed while reducing the overall pattern ratio to minimize substrate warping.
2Object-affected harmful factors
If thick rewiring is formed on the entire surface of the semiconductor substrate, then the shield coverage is improved, but manufacturing precision deteriorates due to suction errors and off-focus issues
Solution Approach 1:
By forming the shield with a smaller film thickness in the peripheral region compared to the central region, the overall pattern ratio is reduced. This minimizes substrate warping that would otherwise cause suction errors in vacuum chucks and off-focus conditions in photolithography, thereby maintaining manufacturing precision while still providing electromagnetic noise suppression.
Data Source
AI summary
A semiconductor device includes a lower insulating layer formed on a primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.