Multi-Layer Semiconductor Shielding for EMI and Magnetic Interference

Solution Overview

Problem

Semiconductor devices, particularly in high-frequency applications, are susceptible to electromagnetic interference (EMI), radio frequency interference (RFI), and low-frequency magnetic field interference, which can disrupt their operation.

Innovation Solution

A multi-layer shielding structure is formed over semiconductor devices, comprising a combination of protective layers, soft ferromagnetic layers, and high conductivity metal layers, which effectively isolate or block both high-frequency and low-frequency interference.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single-layer shielding structure is used, then the structure is simple, but it cannot effectively block both high-frequency and low-frequency interference

Engineering Contradiction:

Improveshielding structure simplicityVSAvoidmulti-frequency interference blocking

Core Design Contradiction:

Device complexityVSObject-affected harmful factors

Solution Approach 1:

The shielding structure is segmented into multiple distinct layers, each with specific material properties tailored to block different types of interference. The conductive material layer segments handle high frequency electromagnetic interference, while the soft ferromagnetic material layer segments handle low frequency magnetic field interference, allowing specialized protection for each frequency range.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies composite materials by combining conductive material layers (for high frequency shielding) with soft ferromagnetic material layers (for low frequency magnetic field shielding) to create a multi-layer shielding structure that addresses both frequency ranges simultaneously. Each material layer targets specific interference types, and their combination provides comprehensive EMI protection.

Inventive Principle:

Principle #40Composite materials

2Productivity

If multiple semiconductor die and IPDs are integrated into a SIP module, then density and electrical functionality are enhanced, but susceptibility to EMI and inter-device interference increases

Engineering Contradiction:

Improveintegration density and functionalityVSAvoidEMI and inter-device interference susceptibility

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The shielding structure is segmented into multiple distinct layers, each with specific material properties tailored to block different types of interference. The conductive material layer segments handle high frequency electromagnetic interference, while the soft ferromagnetic material layer segments handle low frequency magnetic field interference, allowing specialized protection for each frequency range.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies composite materials by combining conductive material layers (for high frequency shielding) with soft ferromagnetic material layers (for low frequency magnetic field shielding) to create a multi-layer shielding structure that addresses both frequency ranges simultaneously. Each material layer targets specific interference types, and their combination provides comprehensive EMI protection.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The multi-layer shielding structure significantly reduces interference from both high-frequency and low-frequency sources, thereby enhancing the operational reliability and performance of semiconductor devices.

Implementation Method 1

A multi-layer shielding structure is formed over the semiconductor device, including a first layer of soft ferromagnetic material

Methodology Applied

Scientific EffectFerromagnetism: Ferromagnetism

Implementation Method 2

A high frequency shield can be made with conductive material coating, such as silver (Ag) or copper (Cu)

Methodology Applied

Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 3

A high frequency shield can be made with conductive material coating, such as silver (Ag) or copper (Cu)

Methodology Applied

Scientific EffectEddy currents: Eddy Currents

Data Source

PatentUS12327799B2Semiconductor device and method of forming multi-layer shielding structure with layers of ferromagnetic material, protective material, laminate material or conductive material over the semiconductor device

Publication Date: 2025.06.10 STATS CHIPPAC LTD

AI summary

A semiconductor device has a substrate and electrical components disposed over the substrate. An encapsulant is disposed over the substrate and electrical components. A multi-layer shielding structure is formed over the encapsulant. The multi-layer shielding structure has a first layer of ferromagnetic material and second layer of a protective layer or conductive layer. The ferromagnetic material can be iron, nickel, nickel iron alloy, iron silicon alloy, silicon steel, nickel iron molybdenum alloy, nickel iron molybdenum copper alloy, iron silicon aluminum alloy, nickel zinc, manganese zinc, other ferrites, amorphous magnetic alloy, amorphous metal alloy, or nanocrystalline alloy. The first layer can be a single, homogeneous material. The protective layer can be stainless steel, tantalum, molybdenum, titanium, nickel, or chromium. The conductive layer can be copper, silver, gold, or aluminum. The multi-layer shielding structure protects the electrical components from low frequency and high frequency interference.