Multi-Layer Shielding Structure for Semiconductor Package EMI Reduction
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Solution Overview
Problem
Semiconductor devices face electromagnetic interference (EMI) issues due to higher clock speeds and smaller sizes, which lead to increased electromagnetic emissions, affecting neighboring devices, and current shielding methods are inadequate in addressing emissions from magnetic fields generated by lower frequency signals.
Innovation Solution
A semiconductor device package design incorporating a substrate, package body, first conductive layer, first shielding layer with high conductivity, second shielding layer with high permeability, and a second conductive layer, where the ratio of the thicknesses of the shielding layers is optimized to provide effective EMI shielding, especially for lower frequency signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If higher clock speeds are used to enhance processing speeds, then processing speed is improved, but electromagnetic emissions increase causing EMI to neighboring devices
Solution Approach 1:
The shielding structure is segmented into multiple layers with different material properties: a first shielding layer with high electrical conductivity and a second shielding layer with high magnetic permeability. Each layer targets different aspects of electromagnetic interference, with the conductive layer addressing electric field components and the permeable layer addressing magnetic field components from lower frequency signals.
Solution Approach 2:
The patent employs a composite shielding structure combining materials with different electromagnetic properties. The first shielding layer uses electrically conductive materials to reflect and absorb electric field components, while the second shielding layer uses magnetically permeable materials to shunt magnetic field components to ground, creating a comprehensive EMI barrier.
2Volume of moving object
If smaller sized semiconductor devices are used to reduce size, then device size is reduced, but device density increases leading to higher EMI levels
Solution Approach 1:
The shielding layers are nested around the semiconductor devices within the package, with the first conductive layer covering the package body and substrate, the first shielding layer covering the conductive layer, the second shielding layer covering the first shielding layer, and the second conductive layer covering the second shielding layer. This nested structure provides comprehensive EMI protection while maintaining compact device dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multi-layer shielding structure effectively reduces EMI by grounding electromagnetic emissions, enhancing shielding effectiveness to at least 30 dB, thereby protecting neighboring semiconductor devices from both electric and magnetic field interference.
Implementation Method 1
The first shielding layer covers the first conductive layer and has a first thickness and comprises a high conductivity material
Implementation Method 2
The second shielding layer covers the first shielding layer and has a second thickness and comprises a high permeability material
Data Source
AI summary
A semiconductor device package includes a substrate, at least one component, a package body, a first conductive layer, a first shielding layer, a second shielding layer and a second conductive layer. The component is disposed on a first surface of the substrate. The package body is disposed on the first surface of the substrate and covers the component. The first conductive layer covers the package body and at least a portion of the substrate. The first shielding layer covers the first conductive layer and has a first thickness and includes a high conductivity material. The second shielding layer covers the first shielding layer and has a second thickness and includes a high permeability material. A ratio of the first thickness to the second thickness being in a range of 0.2 to 3. The second conductive layer covers the second shielding layer.