Semiconductor Shielding Layer Oxide Film for Visual Inspection

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Solution Overview

Problem

The existing semiconductor packages with metal protective films have high lightness, making it difficult to detect defects like scratches or corrosion during visual inspection, leading to operator fatigue due to high light reflectance.

Innovation Solution

A semiconductor device is manufactured with a protective film made of materials such as copper oxide, chromium oxide, iron oxide, nickel oxide, or titanium aluminum nitride, which have lower lightness values, making it easier to detect defects and reducing operator fatigue during visual inspection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a metal protective film is used on the shield layer, then the protective film provides good protection and electrical connectivity, but the high lightness makes it difficult to detect defects during visual inspection

Engineering Contradiction:
Improveprotective film protectionVSAvoiddefect detection difficulty
Core Design Contradiction:
ReliabilityVSDifficulty of detecting and measuring

Solution Approach 1:

The patent changes the color/appearance of the protective film by forming a dark-colored oxide layer (such as black chromium oxide, blue nickel oxide, or green copper oxide) on the metal protective film. This color change makes defects like scratches and corrosion visible during visual inspection while maintaining the protective and conductive functions of the film.

Inventive Principle:
Principle #32Color changes

Solution Approach 2:

The patent creates a composite structure where a metal protective film (such as chromium, nickel, or copper) is combined with an oxide layer formed through oxidation treatment. This composite structure maintains the protective and conductive properties of the metal while adding visual contrast through the oxide layer's dark coloration.

Inventive Principle:
Principle #40Composite materials

2Reliability

If a metal protective film is used on the shield layer, then the protective film provides good protection, but the high light reflectance causes operator fatigue during visual inspection

Engineering Contradiction:
Improveprotective film protectionVSAvoidoperator fatigue
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The patent applies oxidation treatment to convert the bright, highly reflective metal protective film into a dark-colored oxide surface. This reduces light reflectance significantly, making visual inspection more comfortable for operators and reducing eye fatigue, while the oxide layer continues to provide protection.

Inventive Principle:
Principle #32Color changes

3Difficulty of detecting and measuring

If a dark-colored protective film is used, then defect detection is easier during visual inspection, but the protective film may have reduced electrical conductivity

Engineering Contradiction:
Improvedefect detection easeVSAvoidelectrical conductivity
Core Design Contradiction:
Difficulty of detecting and measuringVSReliability

Solution Approach 1:

The patent uses a composite structure where a thin oxide layer (which provides dark coloration for easy defect detection) is formed on top of a underlying metal film (which provides electrical conductivity). The oxide layer is thin enough to allow electrical signals to pass through to the conductive metal layer beneath, maintaining both visual inspection ease and electrical functionality.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of these materials for the protective film reduces the lightness of the semiconductor device's surface, allowing for easier detection of scratches or corrosion and minimizing operator fatigue during inspection.

Implementation Method 1

A metal oxide film is formed on the conductive film by depositing metal on the conductive film in an environment containing oxygen

Methodology Applied
Scientific EffectOxidation: Oxidation

Implementation Method 2

A metal nitride film is formed on the conductive film by depositing metal on the conductive film in an environment containing nitrogen

Methodology Applied
Scientific EffectNitriding: Nitriding

Data Source

PatentUS10115674B2Semiconductor device including electromagnetic interference (EMI) shielding layer and method for manufacturing the semiconductor device
Publication Date: 2018.10.30 KIOXIA CORP
  • US10115674B2 patent drawing
  • US10115674B2 patent drawing
  • US10115674B2 patent drawing

AI summary

According to one embodiment, in a method for manufacturing a semiconductor device, a semiconductor chip is provided on a first surface of a substrate having the first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. A resin that seals the first surface of the semiconductor chip is formed on the semiconductor chip. A conductive film electrically connectable to a ground potential source is formed on an upper surface of the resin and a side surface of the resin. A metal oxide film or a metal nitride film is formed on the conductive film by depositing metal on the conductive film in an environment containing oxygen or nitrogen.