Semiconductor Device Shielding Layer Magnetic Field Protection

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Solution Overview

Problem

Magnetic random-access memory (MRAM) devices are susceptible to errors due to external magnetic fields exceeding their tolerance levels, which can affect data storage and retrieval.

Innovation Solution

A semiconductor device design incorporating a substrate with a first and second conductive shielding layer, a semiconductor chip, and a bonding portion between them, where the shielding layers are electrically insulated from the wiring layer and extend to form a sealed space around the chip, enhancing magnetic flux transfer and shielding external magnetic fields.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a single conductive shielding layer is used, then the device structure is simple, but the shielding effect against external magnetic fields is insufficient

Engineering Contradiction:
Improveshielding effectVSAvoidshielding layer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The shielding structure is divided into multiple independent conductive shielding layers (first conductive shielding layer and second conductive shielding layer) positioned at different locations. Each layer provides partial shielding, and their combined effect creates comprehensive magnetic field protection, resolving the contradiction between shielding effectiveness and structural simplicity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The conductive shielding layers are arranged in a nested configuration where the first shielding layer is positioned below the semiconductor chip and the second shielding layer is positioned above the chip, creating a nested shielding structure that enhances magnetic flux transfer while maintaining compact design.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If the bonding portion has small contact area, then the manufacturing is easier, but the magnetic flux transfer between shielding layers is insufficient

Engineering Contradiction:
Improvemagnetic flux transferVSAvoidbonding portion fabrication
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The bonding portion extends not only in the vertical direction but also in the horizontal direction, creating a multi-dimensional contact structure. This extended bonding portion increases the contact area between shielding layers in multiple dimensions, improving magnetic flux transfer while remaining compatible with standard manufacturing processes.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively reduces or prevents errors caused by external magnetic fields by increasing the contact areas between shielding layers and the bonding portion, enhancing the shielding effect and improving the reliability of the semiconductor chip.

Implementation Method 1

enhancing magnetic flux transfer and shielding external magnetic fields

Methodology Applied
Scientific EffectMagnetic flux transfer: Magnetic Field

Implementation Method 2

A semiconductor device design incorporating a substrate with a first and second conductive shielding layer... enhancing the shielding effect and improving the reliability of the semiconductor chip

Methodology Applied
Scientific EffectElectromagnetic shielding: Faraday Cage

Data Source

PatentUS9893020B2Semiconductor device
Publication Date: 2018.02.13 SAMSUNG ELECTRONICS CO LTD
  • US9893020B2 patent drawing
  • US9893020B2 patent drawing
  • US9893020B2 patent drawing

AI summary

In one embodiment, a semiconductor device comprising, a substrate comprising a wiring layer, a first conductive shielding layer disposed on the substrate and electrically isolated from the wiring layer, the first conductive shielding layer comprising a first bonding surface and a first end surface extending from the first bonding surface, a semiconductor chip disposed on the first conductive shielding layer, a molding member disposed over the first conductive shielding layer to cover the semiconductor chip, a second conductive shielding layer disposed over the first conductive shielding layer and the molding member, the second conductive shielding layer comprising a second bonding surface and a second end surface extending from the second bonding surface, and a bonding portion disposed between the first and second bonding surfaces, the bonding portion comprising a top surface and a bottom surface opposite to the top surface. The bottom surface of the bonding portion contacts the first bonding surface to form a first contact surface. The top surface of the bonding portion contacts the second bonding surface to form a second contact surface. An area of the second contact surface is larger than an area of the second end surface.