Selective Semiconductor Shielding Layer Without Metal Burrs
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Solution Overview
Problem
Conventional methods for selectively forming shielding layers on semiconductor devices often result in metal burrs due to the continuous deposition of shielding material, which can interfere with manufacturing processes and reduce yield.
Innovation Solution
A method involving a tape stack with a lower tape layer covering a predetermined area and an upper tape layer extending beyond and overhanging over an intermediate area, allowing for selective application and removal of a shielding layer without continuous deposition, thereby preventing metal burrs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a shielding layer is uniformly applied around the entire outer periphery of the semiconductor device, then electromagnetic interference shielding is improved, but components requiring exposure (such as antennas) are blocked and manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by forming the shielding layer selectively only in specific areas where EMI protection is needed, while leaving areas with antennas or other exposed components free of shielding material. This is achieved through a multi-layer tape mask structure that allows precise control of shielding layer deposition in different zones of the semiconductor device.
2Object-affected harmful factors
If conventional continuous deposition method is used to form shielding layer, then shielding coverage is improved, but metal burrs are generated that reduce manufacturing yield
Solution Approach 1:
The patent segments the deposition process by using a multi-layer tape mask structure with different layers serving distinct functions. The first tape layer defines the shielding area, while the second tape layer with extended portions creates separation zones that prevent continuous material flow, thereby eliminating metal burr formation during deposition.
Solution Approach 2:
The patent introduces the second tape layer as an intermediary element that extends beyond the first tape layer. This intermediary structure acts as a barrier that interrupts the continuous deposition of shielding material, preventing it from bridging across gaps and forming metal burrs while still allowing the shielding layer to cover the required areas.
3Object-affected harmful factors
If shielding layer is formed on all areas including exposed components, then EMI protection is improved, but antenna functionality and connection purposes are compromised
Solution Approach 1:
The patent implements local quality by creating spatially varying shielding characteristics across the semiconductor device. Areas containing antennas or requiring exposure remain free of shielding material, while other areas receive full shielding coverage. This selective approach maintains antenna functionality and simplifies subsequent manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively forms a shielding layer on the semiconductor device without forming it on exposed components, ensuring proper exposure and reducing the occurrence of metal burrs, thus enhancing manufacturing efficiency and yield.
Implementation Method 1
applying a shielding layer to the substrate of the semiconductor device
Data Source
AI summary
A method for selectively forming a shielding layer on a semiconductor device comprises: attaching a tape stack onto a predetermined area of a substrate of the semiconductor device, wherein the tape stack comprises a lower tape layer that covers the predetermined area and an upper tape layer that extends beyond the predetermined area and overhangs above an intermediate area adjacent to the predetermined area; applying a shielding layer to the substrate of the semiconductor device; and removing the tape stack and a portion of the shielding layer formed on the tape stack from the substrate of the semiconductor device.