Semiconductor structure
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Solution Overview
Problem
Existing semiconductor structures lack adequate moisture robustness for active and passive devices, leading to potential degradation and performance issues, particularly in high humidity and temperature conditions.
Innovation Solution
A semiconductor structure is designed with a substrate hosting active and passive devices, featuring a passivation layer that exposes the active devices to reduce parasitic capacitance and a shielding structure with a barrier and ceiling layer to protect both types of devices from moisture and contaminants, while the passivation layer covers the passive devices for moisture resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a passivation layer is used to protect devices from moisture, then moisture robustness is improved, but parasitic capacitance increases and electrical properties deteriorate
Solution Approach 1:
The passivation structure is segmented into two distinct layers: a first passivation layer covering the passive device for moisture protection, and a second passivation layer (shielding structure) that selectively covers the active device while leaving the gate electrode exposed. This segmentation allows different regions to have different protection levels, reducing parasitic capacitance on the active device while maintaining moisture robustness on the passive device.
Solution Approach 2:
Different passivation strategies are applied to different devices based on their specific requirements. The passive device receives full passivation coverage for maximum moisture protection, while the active device receives selective passivation that protects against moisture but maintains electrical performance by exposing the gate electrode. This local quality approach optimizes both moisture robustness and electrical properties.
2Reliability
If existing moisture resistant structures are applied to active and passive devices, then moisture protection is provided, but electrical properties of active devices are not optimized
Solution Approach 1:
The shielding structure is divided into a barrier layer and a ceiling layer, with the barrier layer providing moisture protection and the ceiling layer providing selective coverage. This segmentation enables precise control over which areas are protected, allowing optimization of electrical properties while maintaining moisture protection.
Solution Approach 2:
Instead of fully covering the active device with passivation material (the conventional approach), the invention inverts the strategy by selectively leaving the gate electrode exposed. This inverted approach prioritizes electrical performance while still providing adequate moisture protection through the barrier layer and ceiling layer configuration.
Data Source
AI summary
A semiconductor structure includes a substrate, and an active device and a passive device over the substrate. The active device is disposed in a first region of the substrate, and the passive device is disposed in a second region of the substrate. The semiconductor structure further includes a shielding structure and a passivation layer. The shielding structure includes a barrier layer and a ceiling layer. The barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer. The passivation layer is under the barrier layer and covers a top surface of the passive device. An air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.