Semiconductor Short-Circuit Detection Structure
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Solution Overview
Problem
Current defect detection methods in the semiconductor industry are limited in detecting small-sized defects, particularly those smaller than 30 nm, as optical detection is not feasible, leading to challenges in identifying short-circuit defects during the manufacturing process.
Innovation Solution
A semiconductor structure with a short-circuit detection structure is developed, comprising a substrate, tested structures, an isolation structure, and a detecting layer made of conductive material. The detecting layer is formed on one of the tested structures to facilitate electron beam detection, overcoming the equipotential phenomenon by creating a voltage contrast image that distinguishes between electrically connected and insulated structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If electron beam detection is used without a detecting layer, then detection process is simple, but equipotential phenomenon prevents effective detection of short-circuit defects
Solution Approach 1:
The patent applies local quality by forming a detecting layer only on specific regions (tested structures) rather than uniformly across the entire substrate. This localized approach creates electrical property differences only where needed for detection, breaking the equipotential phenomenon locally while maintaining structural simplicity elsewhere. The detecting layer is positioned strategically to enable voltage contrast imaging of short-circuit defects without requiring complete coverage.
Solution Approach 2:
The detecting layer acts as an intermediary element between the electron beam and the tested structure. It mediates the interaction by providing a surface with different electrical properties that generates detectable voltage contrast when scanned by the electron beam, enabling indirect detection of short-circuit defects in the underlying tested structure without requiring direct electron beam interaction with the defect itself.
2Measurement precision
If detecting layer is formed on tested structures, then short-circuit defect detection capability is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent applies preliminary action by forming the detecting layer during the manufacturing process before final testing and packaging. The detecting layer is deposited on tested structures as part of the fabrication sequence, enabling detection capability to be built into the structure during manufacturing rather than requiring post-processing modifications. This preliminary formation integrates detection functionality into the manufacturing flow.
Solution Approach 2:
The detecting layer serves multiple functions: it provides electrical property contrast for electron beam detection, acts as a protective coating on the tested structure, and can serve as a foundation for subsequent metallization or passivation layers. This multi-functionality reduces the need for separate detection-specific components, thereby limiting the increase in manufacturing complexity while achieving improved defect detection capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables effective detection of short-circuit defects using electron beam scanning, allowing for the identification of electrical connections or insulation between tested structures, thereby improving defect detection capabilities and overcoming the limitations of existing methods.
Implementation Method 1
The short-circuit detection structure is scanned by an electron beam
Implementation Method 2
A change of a voltage contrast image of the short-circuit detection structure is detected after the short-circuit detection structure is scanned
Data Source
AI summary
Provided is a semiconductor structure including a substrate, at least two tested structures, an isolation structure, and a short-circuit detection structure. At least two tested structures are disposed on the substrate. The at least two tested structures include a conductive material. The isolation structure is sandwiched between at least two tested structures. The detection structure includes a detecting layer, and the detecting layer is disposed on one of the at least two tested structures, so that a short circuit defect between the at least two tested structures may be identified in an electron beam detecting process, and the detecting layer includes a conductive material. A manufacturing method of the semiconductor structure and a method for detecting a short circuit of the semiconductor structure are also provided.