Semiconductor Device Side Surface Electrode Inspection
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Solution Overview
Problem
During the inspection of semiconductor devices with Wafer Level Chip Size Package (WLCSP) structure, defects often occur due to the pressure applied during electrical characteristic testing, which can lead to deformation and breakage of the semiconductor substrate and back surface electrodes, resulting in measurement errors and junction defects.
Innovation Solution
The semiconductor device design includes a through-electrode connecting front and back surface electrodes, with a side surface electrode acting as a terminal for measurement, allowing probing without direct contact to the back surface electrodes, reducing stress and deformation. This configuration uses a socket with recesses to avoid contact with back surface electrodes during inspection, minimizing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If probing is performed on back surface electrodes during electrical characteristic inspection, then electrical characteristics can be measured, but the pressure applied causes deformation and breakage of the semiconductor substrate and electrodes
Solution Approach 1:
The patent introduces a socket as an intermediary component between the probe and the semiconductor device. The socket provides recesses that guide the probe to contact only the side surface electrode, preventing direct pressure application to the back surface electrodes and substrate, thereby eliminating the harmful effect while maintaining measurement capability
Solution Approach 2:
The patent segments the electrical connection path by separating the signal transmission function (through the through-electrode from front to back surface electrodes) from the measurement function (through the side surface electrode). This segmentation allows measurement without applying pressure to the back surface electrodes, resolving the contradiction between measurement capability and structural integrity
2Volume of moving object
If through-electrode structure is used to improve reliability and reduce size, then device compactness is improved, but the structure becomes more vulnerable to pressure-induced defects during inspection
Solution Approach 1:
The socket acts as a mediator that protects the compact through-electrode structure from pressure-induced defects during inspection. By guiding the probe to contact only the side surface electrode through the recess structure, the socket prevents pressure transmission to the through-electrode and back surface electrodes, allowing the compact design to maintain its reliability
Solution Approach 2:
The patent adds a spatial dimension to the measurement process by using the side surface electrode (extending in the lateral direction) rather than contacting the back surface electrodes (in the vertical direction). This dimensional change allows measurement access without applying vertical pressure to the compact through-electrode structure, eliminating the harmful effect while maintaining device compactness
Data Source
AI summary
Provided is a semiconductor device including: a first substrate having a first primary surface, a second primary surface, and a side surface; a semiconductor element formed on the first primary surface; a first electrode formed on the first primary surface and connected to the semiconductor element on the first primary surface; a second electrode formed on the second primary surface; a through-electrode formed so as to penetrate the first substrate and connecting the first electrode and the second electrode to each other; a second substrate bonded to the first substrate so as to face the first primary surface; and a third electrode formed on the side surface of the first substrate and connected to the second electrode.