Semiconductor Side Wall Metal Film Plating
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
During the side wall wiring formation process in semiconductor devices, metal wiring lines are often damaged during etchback, leading to increased resistance, which is undesirable.
Innovation Solution
A method involving the formation of a silicon side wall film followed by displacement plating to replace the silicon with a metal film, reducing the risk of damage and increasing the reliability of the metal wiring line.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If metal wiring line is formed by chemical vapor deposition (CVD) and subjected to etchback, then wiring formation is achieved, but the metal wiring line is damaged and resistance increases
Solution Approach 1:
A silicon side wall film is introduced as an intermediary material between the core element and the metal wiring line. The metal is deposited on this silicon film through plating processing rather than direct CVD on the core, which prevents direct damage to the metal wiring line during subsequent etchback processes. The silicon film acts as a protective mediator that can be selectively removed without harming the metal layer.
Solution Approach 2:
The silicon side wall film is formed in advance before metal deposition. This preliminary formation of the silicon film provides a stable foundation for subsequent metal plating, ensuring that the metal wiring line is deposited on a controlled interface rather than directly on the core element, thereby preventing damage during processing.
2Ease of manufacture
If etchback is performed on the metal wiring line, then patterning is achieved, but the metal wiring line is damaged
Solution Approach 1:
The silicon side wall film serves as a sacrificial intermediary that protects the metal wiring line during etchback. The etching process targets the silicon film for removal while leaving the metal wiring line intact, thus achieving patterning without direct damage to the metal layer.
Solution Approach 2:
The potential harm of etchback damaging the metal wiring line is converted into a benefit by using the silicon side wall film as a protective layer. The etchback process, which would normally harm the metal, is instead used to selectively remove the silicon film, thereby patterning the metal wiring line without damage.
3Reliability
If plating processing is used to replace silicon with metal film, then damage to metal wiring line is prevented, but additional processing steps are required
Solution Approach 1:
The silicon side wall film serves multiple functions: it provides a foundation for metal plating, acts as a protective layer during etchback, and serves as a sacrificial material for patterning. This multi-functionality reduces the need for additional separate processing steps, offsetting the added complexity of plating processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents damage to the metal wiring line during etchback and minimizes resistance increases, enabling the formation of reliable and efficient semiconductor devices with low-temperature film deposition capabilities.
Implementation Method 1
replacing at least part of the silicon side wall film with a metal film by performing plating processing
Data Source
AI summary
According to one embodiment, a method for producing a semiconductor device includes forming a base film above a semiconductor substrate, forming a core above the base film, forming a side wall film on a side face of the core, and replacing at least part of the side wall film with a metal film by performing plating processing.