Semiconductor Structure Sidewall Dielectric Gradient

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Solution Overview

Problem

Current capacitively coupled digital isolators face challenges with high electrical field intensity at the side regions of electrode plates, leading to breakdown risks and leakage currents, which limits their application in high-voltage environments.

Innovation Solution

A semiconductor structure is developed with a sidewall structure attached to the side of the second electrode plate, featuring a dielectric constant that decreases in a specific direction, which reduces the electrical field intensity and mitigates breakdown risks by distributing the field evenly across the dielectric material layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional capacitively coupled digital isolator structure is used, then the device achieves small size, high integration, low power consumption, and high communication speed, but high electrical field intensity occurs at the side regions of electrode plates leading to breakdown risks and leakage currents

Engineering Contradiction:

Improvebreakdown resistanceVSAvoidelectrical field intensity

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by creating a sidewall structure with spatially varying dielectric constant around the second electrode plate. The dielectric constant decreases from the first direction (parallel to substrate) toward the second direction (perpendicular to substrate), specifically designed to address the high electrical field intensity problem at the side regions of the electrode plate without affecting the overall device performance

Inventive Principle:

Principle #3Local quality

2Reliability

If the dielectric constant of the sidewall structure is uniform, then the structure is simple to manufacture, but the electrical field intensity cannot be effectively distributed, leading to breakdown risks

Engineering Contradiction:

Improvebreakdown resistanceVSAvoiddielectric constant distribution

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements parameter changes by varying the dielectric constant of the sidewall structure in a controlled manner. The dielectric constant changes continuously or in steps from the first direction to the second direction, creating a gradient structure that effectively distributes the electrical field intensity while maintaining manufacturability through standard semiconductor fabrication processes

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively weakens the high electrical field intensity at the side region of the second electrode plate, reducing the risk of breakdown and enhancing the capacitive isolator's ability to withstand high voltages.

Implementation Method 1

A dielectric sidewall structure is attached to a side of the second electrode plate, wherein a dielectric constant of the sidewall structure decreases in a second direction away from the second electrode plate

Methodology Applied

Scientific EffectDielectric constant gradient: Dielectric Permittivity

Data Source

PatentUS20230395508A1Semiconductor structure and fabrication method thereof

Publication Date: 2023.12.07 SEMICON MFG INT TIANJIN

AI summary

A semiconductor structure includes a substrate, a first electrode plate over the substrate, a second electrode plate over the first electrode plate, and a sidewall structure. The sidewall structure is attached to a side of the second electrode plate. A dielectric constant of the sidewall structure decreases in a direction away from the second electrode plate.