Insulated Semiconductor Signal Interface for High-Voltage Isolation
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining dielectric strength and preventing dielectric breakdown due to potential differences and high voltage applications, particularly in inverter devices for electric and hybrid vehicles.
Innovation Solution
The semiconductor device incorporates an insulating element with inductive or capacitive components to relay signals between circuits with different potentials, along with an insulating substrate and conductive members to ensure electrical insulation and reduce dielectric breakdown risk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating element is used to electrically insulate circuits with different potentials, then dielectric strength is improved and breakdown risk is reduced, but device complexity increases due to additional insulating substrates and bonding requirements
Solution Approach 1:
An insulating substrate is introduced as an intermediary component between the first and second insulating elements. This mediator provides a dedicated insulating pathway that prevents direct electrical contact between circuits at different potentials, thereby enhancing dielectric strength while maintaining a manageable structural complexity through systematic layering and bonding.
2Reliability
If multiple insulating layers and substrates are added to prevent dielectric breakdown, then reliability under high voltage conditions is improved, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The insulating structure is segmented into multiple discrete functional layers: a first insulating element, an insulating substrate, and a second insulating element. Each segment serves a specific insulation function and can be manufactured and prepared separately, then bonded together. This segmentation allows for specialized manufacturing processes for each layer while maintaining overall reliability through the cumulative insulating effect of all segments.
3Reliability
If the insulating substrate is positioned between the element support and the insulating element, then electrical insulation between different potential circuits is enhanced, but the device occupies more space and volume
Solution Approach 1:
The insulating substrate is positioned in the thickness direction (vertical dimension) between the element support and the insulating element, rather than expanding the device in planar dimensions. This dimensional arrangement provides necessary electrical insulation while minimizing the increase in overall device volume, as the insulation is achieved through layering in the vertical direction where space can be efficiently utilized.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration enhances dielectric strength and reduces the risk of breakdown, ensuring reliable operation under high voltage conditions while maintaining compact size.
Implementation Method 1
an insulating element (13) electrically connected to the first semiconductor element (11) and the second semiconductor element (12), and electrically insulating the first semiconductor element (11) and the second semiconductor element (12) from each other
Implementation Method 2
an insulating substrate (24), wherein the insulating element (13) is bonded to the insulating substrate (24)
Data Source
AI summary
The semiconductor device includes an element support, first and second semiconductor elements on the element support, an insulating element insulating the first and the second semiconductor elements from each other, and an insulating substrate. The insulating element includes a first transceiver electrically connected to the first semiconductor element, a second transceiver electrically connected to the second semiconductor element, and an interfacing member for transmitting and receiving signals between the first and the second transceivers. The interfacing member is closer to the element support than the first and the second transceivers. The insulating substrate is between the element support and the insulating element and bonded to the element support. The insulating element is bonded to the insulating substrate.