Insulated Semiconductor Signal Transfer Across Mixed Voltage Domains
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Solution Overview
Problem
Semiconductor devices face challenges in efficiently transmitting signals between elements with different power supply voltages, particularly between control and drive elements operating at low and high source voltages, requiring insulation to prevent electrical interference.
Innovation Solution
The semiconductor device employs a configuration with insulating transformer elements and capacitive or inductive types to transmit PWM control signals between semiconductor elements, utilizing laminated structures with insulative layers to maintain insulation and magnetic coupling for signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If insulating elements are introduced to transmit signals between control and drive elements with different power supply voltages, then electrical interference is prevented, but device complexity increases
Solution Approach 1:
The insulating film is formed within the semiconductor structure itself, nesting the insulation function inside the existing device architecture rather than adding external insulating elements. This reduces overall device complexity while maintaining signal transmission reliability between control and drive elements with different voltage levels
Solution Approach 2:
The insulating film acts as an intermediary layer between the control element and drive element, enabling signal transmission while preventing direct electrical interference. This mediator approach maintains reliability without requiring complex external insulation systems
2Reliability
If insulating structures are added to maintain insulation between high and low voltage elements, then electrical interference is prevented, but manufacturing complexity increases
Solution Approach 1:
The insulating structure is segmented into multiple thin film layers formed at different stages of the semiconductor manufacturing process. This segmentation allows each layer to be formed using standard fabrication techniques, reducing overall manufacturing complexity compared to forming a single thick insulating structure
Solution Approach 2:
The insulating film is formed preliminarily during the semiconductor device fabrication process before final assembly. This preliminary formation of insulation structures simplifies manufacturing by integrating insulation creation into the existing fabrication flow rather than requiring separate post-processing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively transmits signals across varying voltage levels while maintaining insulation, enhancing the reliability and efficiency of signal transmission in semiconductor devices.
Implementation Method 1
The insulating transformer transmits a signal between the control circuit and the arm circuit
Implementation Method 2
The semiconductor device employs a configuration with insulating transformer elements and capacitive or inductive types to transmit PWM control signals
Implementation Method 3
The semiconductor device employs a configuration with insulating transformer elements and capacitive or inductive types to transmit PWM control signals
Data Source
AI summary
A semiconductor device includes a first semiconductor element, a second semiconductor element, a first lead, a second lead, a first wire, and a first bump-stacked body. The first lead is electrically connected to the first semiconductor element. The second lead is electrically connected to the second semiconductor element and is separated from the first lead. The first wire electrically connects the first semiconductor element and the second semiconductor element. The bump-stacked body includes a plurality of bumps stacked in a thickness direction of the first semiconductor element. The first wire includes a first end overlapping with the first semiconductor element and a second end overlapping with the second semiconductor element in the thickness direction. The first bump-stacked body is located between the first semiconductor element and the first end or between the second semiconductor element and the second end.