Semiconductor Layer Stack With Silicon Interlayer Against Delamination
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Solution Overview
Problem
Semiconductor devices, including inductors, face challenges related to delamination and poor adhesion between organic and inorganic layers due to high topography and film stress, which affects the reliability of the devices.
Innovation Solution
The introduction of a silicon layer between the organic and inorganic layers forms covalent bonds instead of hydrogen bonds, enhancing the adhesion between these layers and preventing delamination. This silicon layer is in physical contact with both the organic and inorganic layers, improving the structural integrity of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If organic and inorganic layers are directly deposited over semiconductor structures with high topography, then device functionality is achieved, but delamination and poor adhesion occur due to film stress
Solution Approach 1:
A silicon-containing layer is introduced as an intermediary between the organic layer and the inorganic layer. This intermediate layer acts as a buffer that reduces film stress and prevents direct contact between the organic and inorganic layers, thereby eliminating delamination while maintaining device functionality.
Solution Approach 2:
The patent employs a composite structure consisting of multiple material layers including organic materials, inorganic materials, and silicon-containing materials. This composite approach allows each layer to contribute its specific properties while the silicon-containing layer provides stress management and adhesion enhancement across the interface.
2Ease of manufacture
If conventional deposition methods are used over high topography structures, then manufacturing simplicity is maintained, but adhesion between organic and inorganic layers deteriorates
Solution Approach 1:
The silicon-containing layer serves as a mediator that can be deposited using conventional deposition techniques, maintaining manufacturing simplicity while fundamentally improving layer adhesion. The intermediate layer's presence allows standard deposition processes to work effectively even over high topography structures.
3Stability of the object's composition
If direct contact between organic and inorganic layers is maintained, then device compactness is achieved, but structural integrity fails due to delamination
Solution Approach 1:
The device structure is segmented into distinct layers with the silicon-containing layer positioned between the organic and inorganic layers. This segmentation prevents direct contact between problematic layers, reducing delamination while adding only one intermediate layer to the overall structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The improved adhesion and reduced delamination enhance the reliability and performance of semiconductor devices by maintaining the structural integrity and preventing failures due to layer separation.
Implementation Method 1
The introduction of a silicon layer between the organic and inorganic layers forms covalent bonds instead of hydrogen bonds, enhancing the adhesion between these layers
Data Source
AI summary
A semiconductor device includes a first conductive layer, a second conductive layer, a third conductive layer, a first organic layer, a first inorganic layer and a first silicon-containing layer. The third conductive layer is disposed between and electrically isolated from the first conductive layer and the second conductive layer. The first organic layer continuously covers the first conductive layer and the third conductive layer. The first inorganic layer is disposed over the first organic layer. The first silicon-containing layer is inserted between the first organic layer and the first inorganic layer, wherein the second conductive layer is disposed on and disposed in the first organic layer, the first silicon-containing layer and the first inorganic layer, to electrically connect to the first conductive layer.