Semiconductor Device With Silicon Nitride Liner Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in reducing leakage current between transistors, improving poly/metal interface resistance, and addressing negative bias temperature instability (NBTI) due to hydrogen mixing from interlayer insulating layers, which affects the performance and reliability of transistors, especially in high-density drive circuits.
Innovation Solution
The semiconductor device incorporates a dense silicon nitride liner layer and a silicon oxide spacer layer configuration that prevents hydrogen mixing into the transistors, ensuring the insulating layer does not penetrate the liner layer, thereby suppressing leakage current and improving NBTI, while allowing controlled hydrogen introduction to enhance P-channel MOS transistor reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If an insulating layer is formed to cover the sidewall of the conductive layer, then leakage current between transistors is reduced, but hydrogen mixing from the interlayer insulating layer into the transistor increases, degrading transistor performance
Solution Approach 1:
A liner layer is introduced as an intermediary barrier between the insulating layer and the transistor. This liner layer selectively prevents hydrogen diffusion from the insulating layer into the transistor while allowing the insulating layer to maintain its leakage current suppression function. The liner layer acts as a selective membrane that mediates between the conflicting requirements of leakage current reduction and hydrogen contamination prevention.
Solution Approach 2:
The structure employs a composite configuration combining multiple materials with different properties: the insulating layer (for leakage current control), the liner layer (for selective hydrogen barrier function), and the spacer layer (for structural support and additional protection). This composite structure leverages the complementary properties of each material to simultaneously achieve leakage current reduction and hydrogen mixing prevention.
2Reliability
If the insulating layer penetrates the liner layer to contact the spacer layer, then NBTI is improved through controlled hydrogen introduction, but leakage current between transistors increases
Solution Approach 1:
The liner layer is designed with spatially selective penetration characteristics. It allows hydrogen to pass through at specific locations (where controlled hydrogen introduction benefits NBTI) while maintaining barrier function at other locations (where leakage current suppression is critical). This local quality variation enables differentiated functionality within the same structural element.
Solution Approach 2:
The electrical and physical parameters of the liner layer are optimized to achieve selective permeability. By controlling the liner layer's composition, thickness, and structural properties, the patent achieves a state where hydrogen diffusion is permitted in controlled amounts for NBTI improvement while electrical leakage is sufficiently blocked to maintain device performance.
3Reliability
If a dense silicon nitride liner layer is used to prevent hydrogen mixing, then transistor performance is maintained, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process is divided into distinct sequential steps: first forming the spacer layer, then the liner layer, and finally the insulating layer. Each layer is deposited and processed separately with optimized parameters, allowing standard semiconductor manufacturing equipment and techniques to be used. This segmentation transforms a complex single-step process into manageable modular steps.
Solution Approach 2:
The liner layer structure provides self-aligned formation through the sequential deposition process. The liner layer automatically positions itself between the spacer and insulating layers, creating the necessary barrier function without requiring additional alignment steps or complex processing. The structure serves its own positioning and protection functions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces leakage current between transistors, maintains high operation speed, and improves the reliability of transistors by preventing hydrogen-induced degradation, thus enhancing the overall performance and stability of semiconductor devices.
Implementation Method 1
a dense silicon nitride liner layer and a silicon oxide spacer layer configuration that prevents hydrogen mixing into the transistors
Implementation Method 2
the insulating layer does not penetrate the liner layer, thereby suppressing leakage current
Data Source
AI summary
A semiconductor device according to an embodiment includes: first and second gate electrodes; first and second spacer layers respectively covering the first and second gate electrodes; first and second liner layers respectively covering the first and second gate electrodes with the first and second spacer layers interposed therebetween; a first contact extending from above the first liner layer to below the first spacer layer and including a first conductive layer connected to the first gate electrode; and a second contact extending from above the second liner layer to below the second spacer layer and including a second conductive layer connected to the second gate electrode. The first conductive layer is in contact with the first spacer layer on the side surface via a first insulating layer covering a sidewall of the first conductive layer. The second conductive layer is in direct contact with the second spacer layer on the side surface.