Semiconductor Silylation Liquid for ALD Deposition Suppression

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Solution Overview

Problem

Existing methods for forming semiconductor elements, such as photolithography and selective deposition using atomic layer deposition (ALD), face challenges in achieving precise alignment and material deposition control, particularly when forming coating films that inhibit material deposition.

Innovation Solution

A chemical liquid comprising a silylation agent, an aprotic solvent, and an alcohol, with specific alcohol content and composition, is used to form a coating film that suppresses material deposition during ALD treatment, allowing for precise control of material distribution on substrates with different materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a coating film is formed using a chemical liquid containing a silicon compound, then a protective film is formed on the substrate, but a large amount of material is deposited on the coating film during ALD treatment

Engineering Contradiction:
Improvematerial deposition controlVSAvoidmaterial deposition amount
Core Design Contradiction:
Manufacturing precisionVSQuantity of substance

Solution Approach 1:

The patent changes the chemical composition parameters of the coating liquid by introducing a specific alcohol component (5-200 ppm) and controlling water content (100 ppm or less), which modifies the coating film's properties to suppress material deposition during ALD treatment

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite coating liquid system combining silylation agents, aprotic solvents, and specific alcohols in controlled proportions, where the alcohol component (5-200 ppm) works synergistically with other components to achieve suppressed material deposition

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If photolithography is used for pattern formation, then semiconductor elements can be formed, but alignment accuracy deteriorates with further miniaturization

Engineering Contradiction:
Improvealignment accuracyVSAvoidminiaturization capability
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent replaces photolithography (optical system) with a chemical-based selective deposition method using ALD, where coating films formed by chemical liquids control material deposition through chemical rather than optical means, enabling better alignment accuracy at smaller scales

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If selective adsorption method is used to form coating films, then material deposition can be controlled, but coating film formation uniformity becomes difficult to maintain

Engineering Contradiction:
Improvematerial deposition controlVSAvoidcoating film uniformity
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent optimizes chemical parameters including alcohol content (5-200 ppm), water content (100 ppm or less), and silylation agent concentration to achieve uniform coating film formation while maintaining suppressed material deposition properties

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a coating liquid with specific local properties (controlled alcohol and water content) that enable selective coating film formation on specific substrate regions while maintaining uniformity across the entire coating surface

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The chemical liquid effectively forms a hydrophobic coating film that reduces material deposition during ALD, enabling precise material placement and improved accuracy in semiconductor manufacturing.

Implementation Method 1

a silylation agent; an aprotic solvent; and an alcohol, in which a content of the alcohol is 5 to 200 ppm by mass with respect to a total mass of the chemical liquid

Methodology Applied
Scientific EffectSilylation: Chemical Bonding

Implementation Method 2

The chemical liquid effectively forms a hydrophobic coating film that reduces material deposition during ALD

Methodology Applied
Scientific EffectHydrophobic effect: Hydrophobe

Implementation Method 3

utilizing selective adsorption of a compound to a region formed of a specific material, a film consisting of such a compound is selectively formed

Methodology Applied
Scientific EffectSelective adsorption: Adsorption

Data Source

PatentUS20250215024A1Chemical liquid, manufacturing method of modified substrate, and manufacturing method of laminate
Publication Date: 2025.07.03 FUJIFILM CORP
  • US20250215024A1 patent drawing
  • US20250215024A1 patent drawing
  • US20250215024A1 patent drawing

AI summary

Provided is a chemical liquid capable of forming a coating film in which the deposition of a material by an ALD treatment is suppressed. The chemical liquid according to the present invention is a chemical liquid used for manufacturing a semiconductor, including a silylation agent, an aprotic solvent, and an alcohol, in which a content of the alcohol is 5 to 200 ppm by mass with respect to a total mass of the chemical liquid.