Semiconductor Simulation Model Parameter Extraction
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Solution Overview
Problem
The increasing complexity and miniaturization of semiconductor devices lead to unintended electrical characteristics, necessitating a technology for precise prediction and simulation of semiconductor device characteristics to reduce experimental costs and improve manufacturing processes.
Innovation Solution
A computing system that simulates semiconductor device characteristics using a model parameter file, generating layout data based on process variables, and manufacturing integrated circuits accordingly, incorporating point and interval model parameters to account for varying internal and external conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high integration and miniaturization of semiconductor devices are implemented, then device functionality and density are improved, but unintended electrical characteristics and manufacturing complexity increase
Solution Approach 1:
The patent applies preliminary action by performing process-device simulation before actual manufacturing to predict and correct unintended electrical characteristics. The simulation environment allows designers to identify potential issues with miniaturized devices and adjust design parameters in advance, preventing manufacturing failures and reducing the need for costly experimental iterations.
2Measurement precision
If physical simulation-based TCAD process-device simulation environment is used, then understanding of semiconductor phenomena is improved, but computational complexity and simulation time increase
Solution Approach 1:
The patent applies partial action by implementing a hybrid simulation approach that uses detailed physical models only for critical process steps and device regions, while using simplified models for less critical areas. This selective modeling maintains prediction accuracy for key electrical characteristics while significantly reducing overall computational time and resource requirements.
3Adaptability or versatility
If multiple model parameters are extracted and calculated for different internal conditions, then simulation accuracy across varying conditions is improved, but data processing complexity increases
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting model parameters based on detected internal conditions during simulation. The system automatically selects and adjusts appropriate model parameters from a library based on the specific operating conditions, device geometry, and process variables, enabling accurate simulation across varying conditions without requiring manual reconfiguration of complex parameter sets.
Data Source
AI summary
A method of manufacturing an integrated circuit in which a semiconductor device is provided includes simulating electrical characteristics of the semiconductor device according to a received process variable, by using a model parameter file including a plurality of model parameters, generating semiconductor device layout data based on a result of the simulation, and manufacturing the integrated circuit according to a semiconductor device layout based on the semiconductor device layout data, wherein the plurality of model parameters are stored in the model parameter file in a form of at least one function regarding the process variable.