Semiconductor Module Sintering via Metal Powder Suspension
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High-pressure sintering processes in power electronics manufacturing cause static and dynamic stresses, leading to material cracks and damage, especially in brittle semiconductor and ceramic components, and are not feasible for complex three-dimensional designs, while low-temperature sintering lacks sufficient bonding strength.
Innovation Solution
A method using a metal powder suspension activated by low pressure (5 MPa) or heating (250°C) for bonding electro-technical components to a substrate, allowing for a high-temperature and temperature-change resistant connection without critical sintering pressure, with fixing and sintering as separate processes, and using inert or reactive gases to enhance sintering quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high pressure (more than 30 MPa) is applied for sintering, then bonding strength is improved, but material cracks and damage occur in brittle semiconductor and ceramic components
Solution Approach 1:
The metal powder suspension is applied to the bonding surfaces before the actual sintering process. This preliminary application of reactive material enables subsequent bonding at lower pressures, avoiding the need for high-pressure treatment that would damage brittle components.
Solution Approach 2:
The invention changes the bonding parameters from high pressure (30 MPa+) to low pressure (5 MPa or less) combined with controlled heating (250°C). This parameter transformation allows achieving sufficient bonding strength without inducing cracks in brittle semiconductor and ceramic materials.
2Reliability
If high pressure (more than 30 MPa) and long duration are used for sintering, then connection reliability is improved, but manufacturing cycle time increases and productivity decreases
Solution Approach 1:
The invention transforms the sintering parameters from high pressure and long duration to low pressure (5 MPa or less) and short duration (a few seconds) combined with moderate heating (250°C). This enables fast cycle rates while maintaining connection reliability suitable for motor vehicle applications.
3Strength
If conventional sintering processes are used, then bonding strength is achieved, but static and dynamic stresses induce cracks in brittle materials
Solution Approach 1:
The invention changes the stress conditions during bonding by using low pressure (5 MPa or less) combined with controlled heating. This avoids the static and dynamic stresses generated by conventional high-pressure sintering, preventing crack formation in brittle semiconductor and ceramic components while achieving sufficient bonding strength.
4Productivity
If low pressure (5 MPa) and heating (250°C) are used to initiate sintering, then expensive pressing equipment is eliminated and cycle rates increase, but bonding strength must be sufficient for high-temperature applications
Solution Approach 1:
The invention uses low pressure (5 MPa or less) combined with controlled heating (250°C) to initiate sintering, achieving transportable fixing for processing. The subsequent pressureless heating step at higher temperatures completes the sintering process, producing bonds with sufficient strength for high-temperature and temperature-change resistant applications while enabling fast cycle rates without expensive pressing equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient, stress-free bonding and sintering of components with lower pressures and faster cycles, preventing material damage and enabling production of complex designs, while maintaining high connection reliability for motor vehicle applications.
Implementation Method 1
the sintering process can be initiated to such an extent that a transportable fixing occurs enabling processing through further manufacturing steps
Implementation Method 2
a suitable heating of the workpiece enables a melting of a soldering material arranged on the workpiece for making a tight soldered connection
Data Source
AI summary
The invention relates to a method for producing a connection between a semiconductor component and semiconductor component and semiconductor module resistant to high temperatures and temperature changes by means of a temperature impinging process, wherein a metal powder suspension is applied to the areas of the semiconductor module to be connected later; the suspension layer is dried, outgassing the volatile components and generating a porous layer; the porous layer is pre-sealed without complete sintering taking place throughout the suspension layer; and, in order to obtain a solid electrically and thermally conductive connection of a semiconductor module to a connection partner from the group of: substrate, further semiconductor or interconnect device, the connection is a sintered connection generated without compression by increasing the temperature and made of a dried metal powder suspension that has undergone a first transport-safe contact with the connection partner in a pre-compression step and has been solidified at zero pressure using temperature sintering.