Semiconductor Sliding Unit for DC Energy Harvesting
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Solution Overview
Problem
Existing mechanical energy harvesting devices face challenges in generating sustained direct-current (DC) electricity with high current density, as they typically produce alternating current (AC) due to high impedance in insulating systems, requiring separate energy storage devices and complex configurations for DC conversion.
Innovation Solution
A semiconductor-based sliding unit that utilizes quantum mechanical tunneling of triboelectric charges across a heterojunction interface, allowing for direct current generation and storage within the same system, eliminating the need for separate energy storage and rectification.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional triboelectric nanogenerators are used to harvest mechanical energy, then high voltage can be obtained, but the current density remains low due to high impedance of insulating materials
Solution Approach 1:
The patent changes the electrical parameter of the contact layer from insulating to semiconducting, which fundamentally alters the impedance characteristics. This parameter change enables the material to conduct triboelectric charges while maintaining charge generation capability, thereby resolving the contradiction between obtaining high voltage and achieving high current density
Solution Approach 2:
The patent replaces the conventional insulating material system with a semiconductor-based system that utilizes quantum mechanical tunneling effects. This substitution eliminates the need for mechanical oscillation to generate current, allowing direct charge flow and conduction, thus achieving high current density while maintaining voltage output
2Productivity
If previous energy harvesting devices are used, then mechanical energy can be converted to electricity, but separate energy storage devices are required
Solution Approach 1:
The patent merges the energy harvesting function and energy storage function into a single integrated device. The semiconductor contact layer serves dual purposes: generating triboelectric charges and storing them through quantum mechanical tunneling. This eliminates the need for separate batteries or capacitors, reducing system complexity while maintaining energy conversion efficiency
Solution Approach 2:
The semiconductor contact layer performs multiple functions simultaneously: it acts as both the triboelectric charge generation layer and the energy storage medium. This multi-functionality resolves the contradiction by allowing the same component to handle both energy conversion and storage, thereby simplifying the overall device architecture
3Productivity
If AC power output from piezoelectric or triboelectric devices is used, then mechanical energy can be harvested, but rectification or special configurations are needed for DC conversion
Solution Approach 1:
The patent replaces the conventional AC generation mechanism with a quantum mechanical tunneling process that directly produces DC current. The semiconductor contact layer enables unidirectional charge flow through quantum tunneling, eliminating the need for mechanical oscillation and subsequent rectification, thus achieving direct DC power output without additional rectification structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the generation and storage of DC electricity with high current density, providing continuous power without the need for additional storage devices or rectification, enhancing energy harvesting efficiency and versatility.
Implementation Method 1
quantum mechanical tunneling of triboelectric charges through a semiconductor-based sliding unit
Implementation Method 2
triboelectric charges generated at the frictional interface
Implementation Method 3
allows the triboelectric charges to quantum mechanically tunnel through the heterojunction interface and be conducted inside (through) the second contact member in the DC form
Implementation Method 4
triboelectric charges generated at the frictional interface
Data Source
AI summary
The present disclosure is directed to a direct-current (DC) mechanical energy harvesting and storage method and apparatus, which can convert mechanical energy such as environmental vibration, automobile kinetic energy, human body motion, etc. directly into 10 sustained DC electricity, and store the electricity in the same materials. More specifically, the disclosure relates to quantum mechanical tunneling of triboelectric charges through a semiconductor-based sliding unit or its integrated system, and the storage of the charges in the unit or its integrated system. A triboelectric generator and storage device includes a first contact member made from a first material. A second contact member is in slidable contact with the first contact member. The second contact member is made from a second material which forms a Schottky barrier with the first material.